| Literature DB >> 22829001 |
Li Qu1, Yunlong Guo, Hao Luo, Cheng Zhong, Gui Yu, Yunqi Liu, Jingui Qin.
Abstract
A simple nickel bis(dithiolene) complex has been developed as an excellent n-type molecular semiconductor for FETs, with an electron mobility of 0.11 cm(2) V(-1) s(-1) and an on/off ratio of 2 × 10(6) despite its small π-conjugated system. Good FET stability in ambient conditions has also been observed.Entities:
Year: 2012 PMID： 22829001 DOI： 10.1039/c2cc33445c
Source DB: PubMed Journal: Chem Commun (Camb) ISSN： 1359-7345 Impact factor: 6.222