| Literature DB >> 22760689 |
A J M Mackus1, S A F Dielissen, J J L Mulders, W M M Kessels.
Abstract
A novel direct-write approach is presented, which relies on area-selective atomic layer deposition on seed layer patterns deposited by electron beam induced deposition. The method enables the nanopatterning of high-quality material with a lateral resolution of only ∼10 nm. Direct-write ALD is a viable alternative to lithography-based patterning with a better compatibility with sensitive nanomaterials.Entities:
Year: 2012 PMID: 22760689 DOI: 10.1039/c2nr30664f
Source DB: PubMed Journal: Nanoscale ISSN: 2040-3364 Impact factor: 7.790