Literature DB >> 22430985

Controlling bulk conductivity in topological insulators: key role of anti-site defects.

D O Scanlon1, P D C King, R P Singh, A de la Torre, S McKeown Walker, G Balakrishnan, F Baumberger, C R A Catlow.   

Abstract

Intrinsic topological insulators are realized by alloying Bi(2)Te(3) with Bi(2)Se(3). Angle-resolved photoemission and bulk transport measurements reveal that the Fermi level is readily tuned into the bulk bandgap. First-principles calculations of the native defect landscape highlight the key role of anti-site defects for achieving this, and predict optimal growth conditions to realize maximally resistive topological insulators.
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Year:  2012        PMID： 22430985     DOI： 10.1002/adma.201200187

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  21 in total

1.  Emergent quantum confinement at topological insulator surfaces.

Authors:  M S Bahramy; P D C King; A de la Torre; J Chang; M Shi; L Patthey; G Balakrishnan; Ph Hofmann; R Arita; N Nagaosa; F Baumberger
Journal:  Nat Commun       Date:  2012       Impact factor: 14.919

Review 2.  Omnipresence of Weak Antilocalization (WAL) in Bi2Se3 Thin Films: A Review on Its Origin.

Authors:  Rubén Gracia-Abad; Soraya Sangiao; Chiara Bigi; Sandeep Kumar Chaluvadi; Pasquale Orgiani; José María De Teresa
Journal:  Nanomaterials (Basel)       Date:  2021-04-22       Impact factor: 5.076

3.  Interplay of Orbital and Relativistic Effects in Bismuth Oxyhalides: BiOF, BiOCl, BiOBr, and BiOI.

Authors:  Alex M Ganose; Madeleine Cuff; Keith T Butler; Aron Walsh; David O Scanlon
Journal:  Chem Mater       Date:  2016-03-10       Impact factor: 9.811

4.  New Insights into Intrinsic Point Defects in V2VI3 Thermoelectric Materials.

Authors:  Tiejun Zhu; Lipeng Hu; Xinbing Zhao; Jian He
Journal:  Adv Sci (Weinh)       Date:  2016-03-23       Impact factor: 16.806

5.  Weak anti-localization and quantum oscillations of surface states in topological insulator Bi₂Se₂Te.

Authors:  Lihong Bao; Liang He; Nicholas Meyer; Xufeng Kou; Peng Zhang; Zhi-Gang Chen; Alexei V Fedorov; Jin Zou; Trevor M Riedemann; Thomas A Lograsso; Kang L Wang; Gary Tuttle; Faxian Xiu
Journal:  Sci Rep       Date:  2012-10-11       Impact factor: 4.379

6.  Synthesis and quantum transport properties of Bi₂Se₃ topological insulator nanostructures.

Authors:  Yuan Yan; Zhi-Min Liao; Yang-Bo Zhou; Han-Chun Wu; Ya-Qing Bie; Jing-Jing Chen; Jie Meng; Xiao-Song Wu; Da-Peng Yu
Journal:  Sci Rep       Date:  2013-02-12       Impact factor: 4.379

7.  Topological transport and atomic tunnelling-clustering dynamics for aged Cu-doped Bi2Te3 crystals.

Authors:  Taishi Chen; Qian Chen; Koen Schouteden; Wenkai Huang; Xuefeng Wang; Zhe Li; Feng Miao; Xinran Wang; Zhaoguo Li; Bo Zhao; Shaochun Li; Fengqi Song; Jinlan Wang; Baigeng Wang; Chris Van Haesendonck; Guanghou Wang
Journal:  Nat Commun       Date:  2014-09-23       Impact factor: 14.919

8.  Dirac fermions at high-index surfaces of bismuth chalcogenide topological insulator nanostructures.

Authors:  Naunidh Virk; Oleg V Yazyev
Journal:  Sci Rep       Date:  2016-02-05       Impact factor: 4.379

9.  Realization of a vertical topological p-n junction in epitaxial Sb2Te3/Bi2Te3 heterostructures.

Authors:  Markus Eschbach; Ewa Młyńczak; Jens Kellner; Jörn Kampmeier; Martin Lanius; Elmar Neumann; Christian Weyrich; Mathias Gehlmann; Pika Gospodarič; Sven Döring; Gregor Mussler; Nataliya Demarina; Martina Luysberg; Gustav Bihlmayer; Thomas Schäpers; Lukasz Plucinski; Stefan Blügel; Markus Morgenstern; Claus M Schneider; Detlev Grützmacher
Journal:  Nat Commun       Date:  2015-11-17       Impact factor: 14.919

10.  Free-electron creation at the 60° twin boundary in Bi2Te3.

Authors:  Kwang-Chon Kim; Joohwi Lee; Byung Kyu Kim; Won Young Choi; Hye Jung Chang; Sung Ok Won; Beomjin Kwon; Seong Keun Kim; Dow-Bin Hyun; Hyun Jae Kim; Hyun Cheol Koo; Jung-Hae Choi; Dong-Ik Kim; Jin-Sang Kim; Seung-Hyub Baek
Journal:  Nat Commun       Date:  2016-08-16       Impact factor: 14.919
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