Literature DB >> 22223545

Optical identification of single- and few-layer MoS₂ sheets.

Hai Li1, Gang Lu, Zongyou Yin, Qiyuan He, Hong Li, Qing Zhang, Hua Zhang.   

Abstract

A simple approach is developed to identify the layer number of 2D MoS₂ sheets. By using an optical imaging method combined with image analysis software, a high-contrast image of the MoS₂ sheets can be extracted from the red (R) channel of the color optical microscopy image. The value of the intensity difference in the grayscale image of the R channel between MoS₂ sheets (1-3 layers) and the SiO₂ substrate can be used to identify the layer number of the sheet.
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Year:  2012        PMID: 22223545     DOI: 10.1002/smll.201101958

Source DB:  PubMed          Journal:  Small        ISSN: 1613-6810            Impact factor:   13.281


  17 in total

1.  The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets.

Authors:  Manish Chhowalla; Hyeon Suk Shin; Goki Eda; Lain-Jong Li; Kian Ping Loh; Hua Zhang
Journal:  Nat Chem       Date:  2013-04       Impact factor: 24.427

Review 2.  Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

Authors:  Qing Hua Wang; Kourosh Kalantar-Zadeh; Andras Kis; Jonathan N Coleman; Michael S Strano
Journal:  Nat Nanotechnol       Date:  2012-11       Impact factor: 39.213

3.  Gate Tunable Transport in Graphene/MoS₂/(Cr/Au) Vertical Field-Effect Transistors.

Authors:  Ghazanfar Nazir; Muhammad Farooq Khan; Sikandar Aftab; Amir Muhammad Afzal; Ghulam Dastgeer; Malik Abdul Rehman; Yongho Seo; Jonghwa Eom
Journal:  Nanomaterials (Basel)       Date:  2017-12-28       Impact factor: 5.076

4.  High-Speed Scalable Silicon-MoS2 P-N Heterojunction Photodetectors.

Authors:  Veerendra Dhyani; Samaresh Das
Journal:  Sci Rep       Date:  2017-03-10       Impact factor: 4.379

5.  An Al₂O₃ Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials.

Authors:  Hang Yang; Shiqiao Qin; Xiaoming Zheng; Guang Wang; Yuan Tan; Gang Peng; Xueao Zhang
Journal:  Nanomaterials (Basel)       Date:  2017-09-22       Impact factor: 5.076

Review 6.  Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors.

Authors:  Sohail Ahmed; Jiabao Yi
Journal:  Nanomicro Lett       Date:  2017-08-16

7.  Improvement of the Bias Stress Stability in 2D MoS2 and WS2 Transistors with a TiO2 Interfacial Layer.

Authors:  Woojin Park; Yusin Pak; Hye Yeon Jang; Jae Hyeon Nam; Tae Hyeon Kim; Seyoung Oh; Sung Mook Choi; Yonghun Kim; Byungjin Cho
Journal:  Nanomaterials (Basel)       Date:  2019-08-12       Impact factor: 5.076

8.  A novel WS2 nanowire-nanoflake hybrid material synthesized from WO3 nanowires in sulfur vapor.

Authors:  Georgies Alene Asres; Aron Dombovari; Teemu Sipola; Robert Puskás; Akos Kukovecz; Zoltán Kónya; Alexey Popov; Jhih-Fong Lin; Gabriela S Lorite; Melinda Mohl; Geza Toth; Anita Lloyd Spetz; Krisztian Kordas
Journal:  Sci Rep       Date:  2016-05-16       Impact factor: 4.379

9.  A Facile Way to Fabricate High-Performance Solution-Processed n-MoS2/p-MoS2 Bilayer Photodetectors.

Authors:  Jian Ye; Xueliang Li; Jianjun Zhao; Xuelan Mei; Qian Li
Journal:  Nanoscale Res Lett       Date:  2015-11-25       Impact factor: 4.703

10.  Intelligent Identification of MoS2 Nanostructures with Hyperspectral Imaging by 3D-CNN.

Authors:  Kai-Chun Li; Ming-Yen Lu; Hong Thai Nguyen; Shih-Wei Feng; Sofya B Artemkina; Vladimir E Fedorov; Hsiang-Chen Wang
Journal:  Nanomaterials (Basel)       Date:  2020-06-13       Impact factor: 5.076

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