Literature DB >> 22183616

High pressure transport properties of the topological insulator Bi2Se3.

J J Hamlin1, J R Jeffries, N P Butch, P Syers, D A Zocco, S T Weir, Y K Vohra, J Paglione, M B Maple.   

Abstract

We report x-ray diffraction, electrical resistivity, and magnetoresistance measurements on Bi2Se3 under high pressure and low temperature conditions. Pressure induces profound changes in both the room temperature value of the electrical resistivity as well as the temperature dependence of the resistivity. Initially, pressure drives Bi2Se3 toward increasingly insulating behavior and then, at higher pressures, the sample appears to enter a fully metallic state coincident with a change in the crystal structure. Within the low pressure phase, Bi2Se3 exhibits an unusual field dependence of the transverse magnetoresistance Δρ(xx) that is positive at low fields and becomes negative at higher fields. Our results demonstrate that pressures below 8 GPa provide a non-chemical means to controllably reduce the bulk conductivity of Bi2Se3.

Year:  2012        PMID: 22183616     DOI: 10.1088/0953-8984/24/3/035602

Source DB:  PubMed          Journal:  J Phys Condens Matter        ISSN: 0953-8984            Impact factor:   2.333


  6 in total

1.  Superconductivity in strong spin orbital coupling compound Sb₂Se₃.

Authors:  P P Kong; F Sun; L Y Xing; J Zhu; S J Zhang; W M Li; Q Q Liu; X C Wang; S M Feng; X H Yu; J L Zhu; R C Yu; W G Yang; G Y Shen; Y S Zhao; R Ahuja; H K Mao; C Q Jin
Journal:  Sci Rep       Date:  2014-10-20       Impact factor: 4.379

2.  Antiferromagnetism and superconductivity in the half-Heusler semimetal HoPdBi.

Authors:  Orest Pavlosiuk; Dariusz Kaczorowski; Xavier Fabreges; Arsen Gukasov; Piotr Wiśniewski
Journal:  Sci Rep       Date:  2016-01-05       Impact factor: 4.379

3.  Superconductivity in topological insulator Sb2Te3 induced by pressure.

Authors:  J Zhu; J L Zhang; P P Kong; S J Zhang; X H Yu; J L Zhu; Q Q Liu; X Li; R C Yu; R Ahuja; W G Yang; G Y Shen; H K Mao; H M Weng; X Dai; Z Fang; Y S Zhao; C Q Jin
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

4.  Electronic Topological Transition in Ag2Te at High-pressure.

Authors:  Yuhang Zhang; Yan Li; Yanmei Ma; Yuwei Li; Guanghui Li; Xuecheng Shao; Hui Wang; Tian Cui; Xin Wang; Pinwen Zhu
Journal:  Sci Rep       Date:  2015-09-30       Impact factor: 4.379

5.  Sb₂Se₃ under pressure.

Authors:  Ilias Efthimiopoulos; Jiaming Zhang; Melvin Kucway; Changyong Park; Rodney C Ewing; Yuejian Wang
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

6.  The d-p band-inversion topological insulator in bismuth-based skutterudites.

Authors:  Ming Yang; Wu-Ming Liu
Journal:  Sci Rep       Date:  2014-05-30       Impact factor: 4.379

  6 in total

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