| Literature DB >> 22174666 |
Hyung-Min Lee1, Maysam Ghovanloo.
Abstract
We present an active full-wave rectifier with offset-controlled high speed comparators in standard CMOS that provides high power conversion efficiency (PCE) in high frequency (HF) range for inductively powered devices. This rectifier provides much lower dropout voltage and far better PCE compared to the passive on-chip or off-chip rectifiers. The built-in offset-control functions in the comparators compensate for both turn-on and turn-off delays in the main rectifying switches, thus maximizing the forward current delivered to the load and minimizing the back current to improve the PCE. We have fabricated this active rectifier in a 0.5-μm 3M2P standard CMOS process, occupying 0.18 mm(2) of chip area. With 3.8 V peak ac input at 13.56 MHz, the rectifier provides 3.12 V dc output to a 500 Ω load, resulting in the PCE of 80.2%, which is the highest measured at this frequency. In addition, overvoltage protection (OVP) as safety measure and built-in back telemetry capabilities have been incorporated in our design using detuning and load shift keying (LSK) techniques, respectively, and tested.Entities:
Year: 2011 PMID: 22174666 PMCID: PMC3235652 DOI: 10.1109/TCSI.2010.2103172
Source DB: PubMed Journal: IEEE Trans Circuits Syst I Regul Pap ISSN: 1549-8328 Impact factor: 3.605