| Literature DB >> 22163994 |
Lilia Arapan1, Gergana Alexieva, Ivan D Avramov, Ekaterina Radeva, Vesseline Strashilov, Ilia Katardjiev, Ventsislav Yantchev.
Abstract
The mass sensitivity of thin aluminum nitride (AlN) film S0 Lamb wave resonators is theoretically and experimentally studied. Theoretical predictions based on modal and finite elements method analysis are experimentally verified. Here, two-port 888 MHz synchronous FPARs are micromachined and subsequently coated with hexamethyl-disiloxane(HMDSO)-plasma-polymerized thin films of various thicknesses. Systematic data on frequency shift and insertion loss versus film thickness are presented. FPARs demonstrate high mass-loading sensitivity as well as good tolerance towards the HMDSO viscous losses. Initial measurements in gas phase environment are further presented.Entities:
Keywords: HMDSO; aluminum nitride; gravimetric; membrane; resonator; sensitivity
Year: 2011 PMID: 22163994 PMCID: PMC3231650 DOI: 10.3390/s110706942
Source DB: PubMed Journal: Sensors (Basel) ISSN: 1424-8220 Impact factor: 3.576
Figure 1.2 Port FPAR Schematic.
Figure 2.Geometry of the problem.
Figure 3.Theoretical mass sensitivity of RSAW, Love wave and S0 wave.
Figure 4.Attenuation of RSAW, Love and S0 waves. β-complex wave number, k0-real part.
Figure 5.Theoretical mass sensitivity as function of layer viscosity.
Figure 6.S0 Lamb wave confinement as function of the losses in the sensing layer.
Figure 7.Theoretical vs. experimental mass sensitivity.
Figure 8.Change in insertion loss of a pp-HMDSO coated FPAR.
Figure 9.Narrowband frequency (upper curves) and phase (lower curves) characteristics of a 2-port FPAR measured (a) prior to layer deposition (b) after deposition of a 75 nm pp-HMDSO.
Figure 10.Frequency response of the 75 nm HMDSO coated FPAR (a) Wide frequency range measurements (b) FEM calculated close to resonance response.
Figure 11.Sensitivity vs. xylene for the FPAR with 380 nm HDMSO.