| Literature DB >> 22162671 |
Lin Zhang1, Zhi-Hua Sun, Feng-Mei Yu, Hong-Bin Chen.
Abstract
The hemocompatibility of La(2)O(3)-doped TiO(2) films with different concentration prepared by radio frequency (RF) sputtering was studied. The microstructures and blood compatibility of TiO(2) films were investigated by scan electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and UV-visible optical absorption spectroscopy, respectively. With the increasing of the La(2)O(3) concentrations, the TiO(2) films become smooth, and the grain size becomes smaller. Meanwhile, the band gap of the samples increases from 2.85 to 3.3 eV with increasing of the La(2)O(3) content in TiO(2) films from 0 to 3.64%. La(2)O(3)-doped TiO(2) films exhibit n-type semiconductor properties due to the existence of Ti(2+) and Ti(3+). The mechanism of hemocompatibility of TiO(2) film doped with La(2)O(3) was analyzed and discussed.Entities:
Year: 2011 PMID: 22162671 PMCID: PMC3227374 DOI: 10.1155/2011/853048
Source DB: PubMed Journal: Bioinorg Chem Appl Impact factor: 7.778
Figure 1Typical SEM images of the surface images of TiO2 thin films doped with La2O3 with various concentrations (a) S1; (b) S2; (c) S3; and (d) S4.
Figure 2The distribution of grains dimensions.
Figure 3XPS spectrum of the Ti 2p region for the surface of S1 and S3.
Figure 4Tauc plot of (αhγ)1/2 as a function of photon energy (hγ) for different amount of La2O3-doped TiO2 thin films.