Literature DB >> 22071289

Sub-nanosecond switching of a tantalum oxide memristor.

Antonio C Torrezan1, John Paul Strachan, Gilberto Medeiros-Ribeiro, R Stanley Williams.   

Abstract

We report sub-nanosecond switching of a metal-oxide-metal memristor utilizing a broadband 20 GHz experimental setup developed to observe fast switching dynamics. Set and reset operations were successfully performed in the tantalum oxide memristor using pulses with durations of 105 and 120 ps, respectively. Reproducibility of the sub-nanosecond switching was also confirmed as the device switched over consecutive cycles.

Entities:  

Year:  2011        PMID： 22071289     DOI： 10.1088/0957-4484/22/48/485203

Source DB:  PubMed          Journal:  Nanotechnology        ISSN： 0957-4484            Impact factor:   3.874


  49 in total

1.  Nanoscale memristive radiofrequency switches.

Authors:  Shuang Pi; Mohammad Ghadiri-Sadrabadi; Joseph C Bardin; Qiangfei Xia
Journal:  Nat Commun       Date:  2015-06-25       Impact factor: 14.919

2.  Memristive devices for computing.

Authors:  J Joshua Yang; Dmitri B Strukov; Duncan R Stewart
Journal:  Nat Nanotechnol       Date:  2013-01       Impact factor: 39.213

3.  Charge Configuration Memory Devices: Energy Efficiency and Switching Speed.

Authors:  Anze Mraz; Rok Venturini; Damjan Svetin; Vitomir Sever; Ian Aleksander Mihailovic; Igor Vaskivskyi; Bojan Ambrozic; Goran Dražić; Maria D'Antuono; Daniela Stornaiuolo; Francesco Tafuri; Dimitrios Kazazis; Jan Ravnik; Yasin Ekinci; Dragan Mihailovic
Journal:  Nano Lett       Date:  2022-06-10       Impact factor: 12.262

4.  Nanoscale cation motion in TaO(x), HfO(x) and TiO(x) memristive systems.

Authors:  Anja Wedig; Michael Luebben; Deok-Yong Cho; Marco Moors; Katharina Skaja; Vikas Rana; Tsuyoshi Hasegawa; Kiran K Adepalli; Bilge Yildiz; Rainer Waser; Ilia Valov
Journal:  Nat Nanotechnol       Date:  2015-09-28       Impact factor: 39.213

5.  Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration.

Authors:  Amit Prakash; Siddheswar Maikap; Sheikh Ziaur Rahaman; Sandip Majumdar; Santanu Manna; Samit K Ray
Journal:  Nanoscale Res Lett       Date:  2013-05-08       Impact factor: 4.703

6.  Impact of device size and thickness of Al2O 3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application.

Authors:  Rajeswar Panja; Sourav Roy; Debanjan Jana; Siddheswar Maikap
Journal:  Nanoscale Res Lett       Date:  2014-12-23       Impact factor: 4.703

7.  Atomic View of Filament Growth in Electrochemical Memristive Elements.

Authors:  Hangbing Lv; Xiaoxin Xu; Pengxiao Sun; Hongtao Liu; Qing Luo; Qi Liu; Writam Banerjee; Haitao Sun; Shibing Long; Ling Li; Ming Liu
Journal:  Sci Rep       Date:  2015-08-21       Impact factor: 4.379

8.  RRAM characteristics using a new Cr/GdOx/TiN structure.

Authors:  Debanjan Jana; Mrinmoy Dutta; Subhranu Samanta; Siddheswar Maikap
Journal:  Nanoscale Res Lett       Date:  2014-12-17       Impact factor: 4.703

9.  Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte.

Authors:  Sheikh Ziaur Rahaman; Siddheswar Maikap; Atanu Das; Amit Prakash; Ya Hsuan Wu; Chao-Sung Lai; Ta-Chang Tien; Wei-Su Chen; Heng-Yuan Lee; Frederick T Chen; Ming-Jinn Tsai; Liann-Be Chang
Journal:  Nanoscale Res Lett       Date:  2012-11-06       Impact factor: 4.703

10.  Tunnel junction based memristors as artificial synapses.

Authors:  Andy Thomas; Stefan Niehörster; Savio Fabretti; Norman Shepheard; Olga Kuschel; Karsten Küpper; Joachim Wollschläger; Patryk Krzysteczko; Elisabetta Chicca
Journal:  Front Neurosci       Date:  2015-07-07       Impact factor: 4.677
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