| Literature DB >> 21881853 |
Ying Chen1, Bo Gao, Jing-Xiang Zhao, Qing-Hai Cai, Hong-Gang Fu.
Abstract
Exploring and evaluating the potential applications of two-dimensional graphene is an increasingly hot topic in graphene research. In this paper, by studying the adsorption of NO, N(2)O, and NO(2) on pristine and silicon (Si)-doped graphene with density functional theory methods, we evaluated the possibility of using Si-doped graphene as a candidate to detect or reduce harmful nitrogen oxides. The results indicate that, while adsorption of the three molecules on pristine graphene is very weak, Si-doping enhances the interaction of these molecules with graphene sheet in various ways: (1) two NO molecules can be adsorbed on Si-doped graphene in a paired arrangement, while up to four NO(2) molecules attach to the doped graphene with an average adsorption energy of -0.329 eV; (2) the N(2)O molecule can be reduced easily to the N(2) molecule, leaving an O-atom on the Si-doped graphene. Moreover, we find that adsorption of NO and NO(2) leads to large changes in the electronic properties of Si-doped graphene. On the basis of these results, Si-doped graphene can be expected to be a good sensor for NO and NO(2) detection, as well as a metal-free catalyst for N(2)O reduction.Entities:
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Year: 2011 PMID: 21881853 DOI: 10.1007/s00894-011-1226-x
Source DB: PubMed Journal: J Mol Model ISSN: 0948-5023 Impact factor: 1.810