Literature DB >> 21833994

Effective mobility enhancement by using nanometer dot doping in amorphous IGZO thin-film transistors.

Hsiao-Wen Zan1, Wu-Wei Tsai, Chia-Hsin Chen, Chuang-Chuang Tsai.   

Abstract

Mesh：

Substances：

Year:  2011        PMID： 21833994     DOI： 10.1002/adma.201102530

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


× No keyword cloud information.
  3 in total

1.  Electronic Structure of Low-Temperature Solution-Processed Amorphous Metal Oxide Semiconductors for Thin-Film Transistor Applications.

Authors:  Josephine Socratous; Kulbinder K Banger; Yana Vaynzof; Aditya Sadhanala; Adam D Brown; Alessandro Sepe; Ullrich Steiner; Henning Sirringhaus
Journal:  Adv Funct Mater       Date:  2015-02-18       Impact factor: 18.808

2.  Zinc oxide and indium-gallium-zinc-oxide bi-layer synaptic device with highly linear long-term potentiation and depression characteristics.

Authors:  Hyun-Woong Choi; Ki-Woo Song; Seong-Hyun Kim; Kim Thanh Nguyen; Sunil Babu Eadi; Hyuk-Min Kwon; Hi-Deok Lee
Journal:  Sci Rep       Date:  2022-01-24       Impact factor: 4.379

3.  Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals.

Authors:  Chen Wei Shih; Albert Chin; Chun Fu Lu; Wei Fang Su
Journal:  Sci Rep       Date:  2016-01-08       Impact factor: 4.379
  3 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.