The crystal structure of chloranilic acid, C(6)H(2)Cl(2)O(4), was first described by Andersen in 1967 [Andersen, E. K. (1967). Acta Cryst. 22, 188-191] at room temperature using visually estimated intensities. Taking into account the importance of the title compound, we have redetermined the structure at 100 (1) K. The approximately planar mol-ecule [the maximum deviation from the mean plane through the ring is 0.0014 (9) Å for the ring atoms and 0.029 (3) Å for the other atoms] occupies a special position, lying across the center of symmetry. In the crystal structure, a two-dimensional hydrogen-bonded network sustained by O-H⋯O inter-actions runs approximately parallel to [101]. The two-dimensional layers are further packed in a parallel fashion, stabilized by Cl⋯Cl inter-actions [Cl⋯Cl = 3.2838 (8) Å, C-Cl⋯Cl = 152.96 (6)°].
The crystal structure of chloranilic acid, C(6)H(2)Cl(2)O(4), was first described by Andersen in 1967 [Andersen, E. K. (1967). Acta Cryst. 22, 188-191] at room temperature using visually estimated intensities. Taking into account the importance of the title compound, we have redetermined the structure at 100 (1) K. The approximately planar mol-ecule [the maximum deviation from the mean plane through the ring is 0.0014 (9) Å for the ring atoms and 0.029 (3) Å for the other atoms] occupies a special position, lying across the center of symmetry. In the crystal structure, a two-dimensional hydrogen-bonded network sustained by O-H⋯O inter-actions runs approximately parallel to [101]. The two-dimensional layers are further packed in a parallel fashion, stabilized by Cl⋯Cl inter-actions [Cl⋯Cl = 3.2838 (8) Å, C-Cl⋯Cl = 152.96 (6)°].
For charge-transfer complexes of chloranilic acid, see: Gotoh et al. (2006 ▶, 2007 ▶, 2008 ▶); Gotoh & Ishida (2009 ▶); Ishida (2004 ▶); Ishida & Kashino (1999 ▶). For a recent study of the formation of either salts or co-crystals by chloranilic acid with different organic bases, see: Molčanov & Kojić-Prodić (2010 ▶). For the previous determination of the title structure, see: Andersen (1967a
▶) and of its hydrate, see: Andersen (1967b
▶). For hydrogen-bond motifs, see: Bernstein et al. (1995 ▶). For a description of the Cambridge Structural Database, see: (Allen, 2002 ▶).
Oxford Diffraction Xcalibur Eos diffractometerAbsorption correction: multi-scan (CrysAlis PRO; Oxford Diffraction (2009 ▶)) T
min = 0.857, T
max = 1.0006154 measured reflections774 independent reflections698 reflections with I > 2σ(I)R
int = 0.032
Refinement
R[F
2 > 2σ(F
2)] = 0.025wR(F
2) = 0.056S = 1.09774 reflections59 parametersAll H-atom parameters refinedΔρmax = 0.37 e Å−3Δρmin = −0.27 e Å−3Data collection: CrysAlis PRO (Oxford Diffraction, 2009 ▶); cell refinement: CrysAlis PRO; data reduction: CrysAlis PRO program(s) used to solve structure: SIR92 (Altomare et al., 1993 ▶); program(s) used to refine structure: SHELXL97 (Sheldrick, 2008 ▶); molecular graphics: Stereochemical Workstation Operation Manual (Siemens, 1989 ▶); software used to prepare material for publication: SHELXL97.Crystal structure: contains datablocks I, global. DOI: 10.1107/S1600536810003387/ds2017sup1.cifStructure factors: contains datablocks I. DOI: 10.1107/S1600536810003387/ds2017Isup2.hklAdditional supplementary materials: crystallographic information; 3D view; checkCIF report
Primary atom site location: structure-invariant direct methods
Least-squares matrix: full
Secondary atom site location: difference Fourier map
R[F2 > 2σ(F2)] = 0.025
Hydrogen site location: inferred from neighbouring sites
wR(F2) = 0.056
All H-atom parameters refined
S = 1.09
w = 1/[σ2(Fo2) + (0.0204P)2 + 0.3502P] where P = (Fo2 + 2Fc2)/3
774 reflections
(Δ/σ)max < 0.001
59 parameters
Δρmax = 0.37 e Å−3
0 restraints
Δρmin = −0.27 e Å−3
Geometry. All esds (except the esd in the dihedral angle between two l.s. planes) are
estimated using the full covariance matrix. The cell esds are taken into
account individually in the estimation of esds in distances, angles and
torsion angles; correlations between esds in cell parameters are only used
when they are defined by crystal symmetry. An approximate (isotropic)
treatment of cell esds is used for estimating esds involving l.s. planes.
Refinement. Refinement of F2 against ALL reflections. The weighted R-factor
wR and goodness of fit S are based on F2, conventional
R-factors R are based on F, with F set to zero for
negative F2. The threshold expression of F2 >
σ(F2) is used only for calculating R-factors(gt) etc. and is
not relevant to the choice of reflections for refinement. R-factors
based on F2 are statistically about twice as large as those based on
F, and R- factors based on ALL data will be even larger.