Literature DB >> 21579372

4-Methyl-benzene-carbothio-amide.

Saqib Ali, Shahid Hameed, Ahmad Luqman, Tashfeen Akhtar, Masood Parvez.   

Abstract

In the title mol-ecule, C(8)H(9)NS, the mean plane of the carbothio-amide group is twisted slightly with respect to the mean plane of the benzene ring, making a dihedral angle of 17.03 (10)°. The crystal structure is stabilized by inter-molecular N-H⋯S hydrogen bonds, resulting in the formation of eight-membered rings lying about inversion centers and representing R(2) (2)(8) and R(4) (2)(8) motifs. Futhermore, these hydrogen bonds build up chains parallel to the b axis.

Entities:  

Year:  2010        PMID: 21579372      PMCID: PMC2979520          DOI: 10.1107/S1600536810015813

Source DB:  PubMed          Journal:  Acta Crystallogr Sect E Struct Rep Online        ISSN: 1600-5368


Related literature

For the use of thio­amides as inter­mediates in the synthesis of various heterocyclic compounds, see: Zahid et al. (2009 ▶). For the uses of thio­amides, see: Lebana et al. (2008 ▶). For the biological activity of thio­amides, see: Jagodzinski (2003 ▶); Klimesova et al. (1999 ▶). For related structures, see: Khan et al. (2009a ▶,b ▶,c ▶); Jian et al. (2006 ▶); Ali et al. (2010 ▶). For graph-set notation, see: Etter et al. (1990 ▶); Bernstein et al. (1994 ▶).

Experimental

Crystal data

C8H9NS M = 151.22 Monoclinic, a = 9.7341 (5) Å b = 5.8391 (2) Å c = 13.9055 (6) Å β = 104.946 (3)° V = 763.63 (6) Å3 Z = 4 Mo Kα radiation μ = 0.34 mm−1 T = 123 K 0.10 × 0.06 × 0.06 mm

Data collection

Nonius KappaCCD diffractometer Absorption correction: multi-scan (SORTAV; Blessing, 1997 ▶) T min = 0.967, T max = 0.980 2741 measured reflections 1482 independent reflections 1399 reflections with I > 2σ(I) R int = 0.025

Refinement

R[F 2 > 2σ(F 2)] = 0.034 wR(F 2) = 0.089 S = 1.06 1482 reflections 92 parameters H-atom parameters constrained Δρmax = 0.27 e Å−3 Δρmin = −0.24 e Å−3 Data collection: COLLECT (Hooft, 1998 ▶); cell refinement: DENZO (Otwinowski & Minor, 1997 ▶); data reduction: SCALEPACK (Otwinowski & Minor, 1997 ▶); program(s) used to solve structure: SHELXS97 (Sheldrick, 2008 ▶); program(s) used to refine structure: SHELXL97 (Sheldrick, 2008 ▶); molecular graphics: ORTEP-3 for Windows (Farrugia, 1997 ▶); software used to prepare material for publication: SHELXL97. Crystal structure: contains datablocks global, I. DOI: 10.1107/S1600536810015813/dn2557sup1.cif Structure factors: contains datablocks I. DOI: 10.1107/S1600536810015813/dn2557Isup2.hkl Additional supplementary materials: crystallographic information; 3D view; checkCIF report
C8H9NSF(000) = 320
Mr = 151.22Dx = 1.315 Mg m3
Monoclinic, P21/cMo Kα radiation, λ = 0.71073 Å
Hall symbol: -P 2ybcCell parameters from 1473 reflections
a = 9.7341 (5) Åθ = 1.0–26.0°
b = 5.8391 (2) ŵ = 0.34 mm1
c = 13.9055 (6) ÅT = 123 K
β = 104.946 (3)°Block, yellow
V = 763.63 (6) Å30.10 × 0.06 × 0.06 mm
Z = 4
Nonius KappaCCD diffractometer1482 independent reflections
Radiation source: fine-focus sealed tube1399 reflections with I > 2σ(I)
graphiteRint = 0.025
ω and φ scansθmax = 26.0°, θmin = 3.8°
Absorption correction: multi-scan (SORTAV; Blessing, 1997)h = −11→11
Tmin = 0.967, Tmax = 0.980k = −7→7
2741 measured reflectionsl = −16→16
Refinement on F2Primary atom site location: structure-invariant direct methods
Least-squares matrix: fullSecondary atom site location: difference Fourier map
R[F2 > 2σ(F2)] = 0.034Hydrogen site location: difference Fourier map
wR(F2) = 0.089H-atom parameters constrained
S = 1.06w = 1/[σ2(Fo2) + (0.0373P)2 + 0.5912P] where P = (Fo2 + 2Fc2)/3
1482 reflections(Δ/σ)max < 0.001
92 parametersΔρmax = 0.27 e Å3
0 restraintsΔρmin = −0.24 e Å3
Geometry. All esds (except the esd in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell esds are taken into account individually in the estimation of esds in distances, angles and torsion angles; correlations between esds in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell esds is used for estimating esds involving l.s. planes.
xyzUiso*/Ueq
S10.15464 (4)0.79266 (7)0.03136 (3)0.02316 (16)
N10.19369 (15)0.3538 (2)0.06514 (10)0.0219 (3)
H1A0.24630.23130.08440.026*
H1B0.10070.34100.04400.026*
C10.41221 (16)0.5673 (3)0.10461 (11)0.0168 (3)
C20.48580 (17)0.7599 (3)0.08529 (11)0.0189 (3)
H20.43440.88490.04960.023*
C30.63277 (18)0.7714 (3)0.11743 (12)0.0207 (4)
H30.68050.90450.10370.025*
C40.71154 (17)0.5908 (3)0.16965 (11)0.0203 (4)
C50.63795 (18)0.3995 (3)0.19021 (11)0.0211 (4)
H50.68970.27530.22640.025*
C60.49105 (17)0.3872 (3)0.15894 (11)0.0196 (3)
H60.44330.25570.17440.023*
C70.25443 (17)0.5571 (3)0.06803 (11)0.0177 (3)
C80.87114 (18)0.6011 (3)0.20278 (13)0.0280 (4)
H8A0.90330.75320.18830.042*
H8B0.91140.48480.16710.042*
H8C0.90280.57190.27450.042*
U11U22U33U12U13U23
S10.0174 (2)0.0146 (2)0.0353 (3)0.00051 (14)0.00272 (18)0.00029 (16)
N10.0160 (7)0.0155 (7)0.0332 (8)−0.0010 (6)0.0045 (6)0.0019 (6)
C10.0192 (8)0.0154 (8)0.0163 (7)−0.0005 (6)0.0055 (6)−0.0017 (6)
C20.0205 (8)0.0156 (7)0.0204 (7)0.0009 (6)0.0050 (6)0.0019 (6)
C30.0215 (8)0.0192 (8)0.0221 (8)−0.0032 (6)0.0066 (6)−0.0004 (6)
C40.0193 (8)0.0229 (8)0.0182 (7)0.0001 (6)0.0041 (6)−0.0033 (6)
C50.0240 (8)0.0203 (8)0.0180 (7)0.0042 (6)0.0037 (6)0.0024 (6)
C60.0234 (8)0.0158 (8)0.0202 (7)−0.0018 (6)0.0068 (6)0.0009 (6)
C70.0204 (8)0.0161 (8)0.0170 (7)−0.0007 (6)0.0057 (6)−0.0007 (6)
C80.0194 (9)0.0328 (10)0.0299 (9)0.0000 (7)0.0026 (7)0.0007 (8)
S1—C71.6852 (16)C3—H30.9500
N1—C71.322 (2)C4—C51.396 (2)
N1—H1A0.8800C4—C81.503 (2)
N1—H1B0.8800C5—C61.385 (2)
C1—C21.396 (2)C5—H50.9500
C1—C61.403 (2)C6—H60.9500
C1—C71.489 (2)C8—H8A0.9800
C2—C31.386 (2)C8—H8B0.9800
C2—H20.9500C8—H8C0.9800
C3—C41.393 (2)
C7—N1—H1A120.0C6—C5—C4121.35 (15)
C7—N1—H1B120.0C6—C5—H5119.3
H1A—N1—H1B120.0C4—C5—H5119.3
C2—C1—C6118.11 (15)C5—C6—C1120.48 (15)
C2—C1—C7120.12 (14)C5—C6—H6119.8
C6—C1—C7121.77 (14)C1—C6—H6119.8
C3—C2—C1121.02 (15)N1—C7—C1117.39 (14)
C3—C2—H2119.5N1—C7—S1120.35 (12)
C1—C2—H2119.5C1—C7—S1122.26 (12)
C2—C3—C4120.99 (15)C4—C8—H8A109.5
C2—C3—H3119.5C4—C8—H8B109.5
C4—C3—H3119.5H8A—C8—H8B109.5
C3—C4—C5118.04 (15)C4—C8—H8C109.5
C3—C4—C8121.05 (15)H8A—C8—H8C109.5
C5—C4—C8120.91 (15)H8B—C8—H8C109.5
C6—C1—C2—C31.0 (2)C4—C5—C6—C10.6 (2)
C7—C1—C2—C3−179.07 (14)C2—C1—C6—C5−1.4 (2)
C1—C2—C3—C40.3 (2)C7—C1—C6—C5178.65 (14)
C2—C3—C4—C5−1.1 (2)C2—C1—C7—N1162.91 (15)
C2—C3—C4—C8178.76 (15)C6—C1—C7—N1−17.2 (2)
C3—C4—C5—C60.7 (2)C2—C1—C7—S1−17.1 (2)
C8—C4—C5—C6−179.18 (15)C6—C1—C7—S1162.78 (12)
D—H···AD—HH···AD···AD—H···A
N1—H1B···S1i0.882.563.4178 (14)166
N1—H1A···S1ii0.882.753.3179 (15)124
Table 1

Hydrogen-bond geometry (Å, °)

D—H⋯AD—HH⋯ADAD—H⋯A
N1—H1B⋯S1i0.882.563.4178 (14)166
N1—H1A⋯S1ii0.882.753.3179 (15)124

Symmetry codes: (i) ; (ii) .

  7 in total

1.  Thioamides as useful synthons in the synthesis of heterocycles.

Authors:  Tadeusz S Jagodziński
Journal:  Chem Rev       Date:  2003-01       Impact factor: 60.622

2.  A short history of SHELX.

Authors:  George M Sheldrick
Journal:  Acta Crystallogr A       Date:  2007-12-21       Impact factor: 2.290

3.  Graph-set analysis of hydrogen-bond patterns in organic crystals.

Authors:  M C Etter; J C MacDonald; J Bernstein
Journal:  Acta Crystallogr B       Date:  1990-04-01

4.  3-Methyl-thio-benzamide.

Authors:  Mahmood-Ul-Hassan Khan; Shahid Hameed; Tashfeen Akhtar; Jason D Masuda
Journal:  Acta Crystallogr Sect E Struct Rep Online       Date:  2009-05-29

5.  4-Chloro-benzothio-amide.

Authors:  Mahmood-Ul-Hassan Khan; Shahid Hameed; Tashfeen Akhtar; Jason D Masuda
Journal:  Acta Crystallogr Sect E Struct Rep Online       Date:  2009-04-25

6.  4-Methoxy-benzene-carbothio-amide.

Authors:  Saqib Ali; Shahid Hameed; Ahmad Luqman; Tashfeen Akhtar; Masood Parvez
Journal:  Acta Crystallogr Sect E Struct Rep Online       Date:  2010-05-08

7.  4-Bromo-thio-benzamide.

Authors:  Mahmood-Ul-Hassan Khan; Shahid Hameed; Tashfeen Akhtar; Jason D Masuda
Journal:  Acta Crystallogr Sect E Struct Rep Online       Date:  2009-05-20
  7 in total

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