| Literature DB >> 21405346 |
Aurélien Lherbier1, Simon M-M Dubois, Xavier Declerck, Stephan Roche, Yann-Michel Niquet, Jean-Christophe Charlier.
Abstract
Quantum transport properties of disordered graphene with structural defects (Stone-Wales and divacancies) are investigated using a realistic π-π* tight-binding model elaborated from ab initio calculations. Mean free paths and semiclassical conductivities are then computed as a function of the nature and density of defects (using an order-N real-space Kubo-Greenwood method). By increasing the defect density, the decay of the semiclassical conductivities is predicted to saturate to a minimum value of 4e2/πh over a large range (plateau) of carrier density (>0.5×10(14) cm(-20). Additionally, strong contributions of quantum interferences suggest that the Anderson localization regime could be experimentally measurable for a defect density as low as 1%.Entities:
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Year: 2011 PMID: 21405346 DOI: 10.1103/PhysRevLett.106.046803
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161