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Literature DB >> 21372836

Nanoelectronics: Flat transistors get off the ground.

Frank Schwierz.

Abstract

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Year: 2011 PMID： 21372836 DOI： 10.1038/nnano.2011.26

Source DB: PubMed Journal: Nat Nanotechnol ISSN： 1748-3387 Impact factor: 39.213

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8 in total

1. Two-dimensional atomic crystals.

Authors: K S Novoselov; D Jiang; F Schedin; T J Booth; V V Khotkevich; S V Morozov; A K Geim
Journal: Proc Natl Acad Sci U S A Date: 2005-07-18 Impact factor: 11.205

2. Graphene: electronic and photonic properties and devices.

Authors: Phaedon Avouris
Journal: Nano Lett Date: 2010-11-10 Impact factor: 11.189

3. Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors.

Authors: Xinran Wang; Yijian Ouyang; Xiaolin Li; Hailiang Wang; Jing Guo; Hongjie Dai
Journal: Phys Rev Lett Date: 2008-05-20 Impact factor: 9.161

4. Single-layer MoS2 transistors.

Authors: B Radisavljevic; A Radenovic; J Brivio; V Giacometti; A Kis
Journal: Nat Nanotechnol Date: 2011-01-30 Impact factor: 39.213

5. High-speed graphene transistors with a self-aligned nanowire gate.

Authors: Lei Liao; Yung-Chen Lin; Mingqiang Bao; Rui Cheng; Jingwei Bai; Yuan Liu; Yongquan Qu; Kang L Wang; Yu Huang; Xiangfeng Duan
Journal: Nature Date: 2010-09-01 Impact factor: 49.962

6. The rise of graphene.

Authors: A K Geim; K S Novoselov
Journal: Nat Mater Date: 2007-03 Impact factor: 43.841

7. Graphene transistors.

Authors: Frank Schwierz
Journal: Nat Nanotechnol Date: 2010-05-30 Impact factor: 39.213

8. Large-area synthesis of high-quality and uniform graphene films on copper foils.

Authors: Xuesong Li; Weiwei Cai; Jinho An; Seyoung Kim; Junghyo Nah; Dongxing Yang; Richard Piner; Aruna Velamakanni; Inhwa Jung; Emanuel Tutuc; Sanjay K Banerjee; Luigi Colombo; Rodney S Ruoff
Journal: Science Date: 2009-05-07 Impact factor: 47.728

8 in total

5 in total

Nanoelectronics: Flat transistors get off the ground.

1. Two-dimensional atomic crystals.

2. Graphene: electronic and photonic properties and devices.

3. Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors.

4. Single-layer MoS2 transistors.

5. High-speed graphene transistors with a self-aligned nanowire gate.

6. The rise of graphene.

7. Graphene transistors.

8. Large-area synthesis of high-quality and uniform graphene films on copper foils.

1. Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers.

2. H2S-mediated thermal and photochemical methane activation.

Review 3. Nucleic acid-functionalized transition metal nanosheets for biosensing applications.

4. Ferromagnetism in ultrathin MoS2 nanosheets: from amorphous to crystalline.

5. Ferromagnetism in freestanding MoS2 nanosheets.