Literature DB >> 21358647

A size-dependent nanoscale metal-insulator transition in random materials.

Albert B K Chen1, Soo Gil Kim, Yudi Wang, Wei-Shao Tung, I-Wei Chen.   

Abstract

Insulators and conductors with periodic structures can be readily distinguished, because they have different band structures, but the differences between insulators and conductors with random structures are more subtle. In 1958, Anderson provided a straightforward criterion for distinguishing between random insulators and conductors, based on the 'diffusion' distance ζ for electrons at 0 K (ref. 3). Insulators have a finite ζ, but conductors have an infinite ζ. Aided by a scaling argument, this concept can explain many phenomena in disordered electronic systems, such as the fact that the electrical resistivity of 'dirty' metals always increases as the temperature approaches 0 K (refs 4-6). Further verification for this model has come from experiments that measure how the properties of macroscopic samples vary with changes in temperature, pressure, impurity concentration and applied magnetic field, but, surprisingly, there have been no attempts to engineer a metal-insulator transition by making the sample size less than or more than ζ. Here, we report such an engineered transition using six different thin-film systems: two are glasses that contain dispersed platinum atoms, and four are single crystals of perovskite that contain minor conducting components. With a sample size comparable to ζ, transitions can be triggered by using an electric field or ultraviolet radiation to tune ζ through the injection and extraction of electrons. It would seem possible to take advantage of this nanometallicity in applications.

Entities:  

Year:  2011        PMID: 21358647     DOI: 10.1038/nnano.2011.21

Source DB:  PubMed          Journal:  Nat Nanotechnol        ISSN: 1748-3387            Impact factor:   39.213


  10 in total

1.  Transport in polyaniline near the critical regime of the metal-insulator transition.

Authors: 
Journal:  Phys Rev B Condens Matter       Date:  1993-12-15

2.  Plasmonics: merging photonics and electronics at nanoscale dimensions.

Authors:  Ekmel Ozbay
Journal:  Science       Date:  2006-01-13       Impact factor: 47.728

3.  Giant thermoelectric Seebeck coefficient of a two-dimensional electron gas in SrTiO3.

Authors:  Hiromichi Ohta; Sungwng Kim; Yoriko Mune; Teruyasu Mizoguchi; Kenji Nomura; Shingo Ohta; Takashi Nomura; Yuki Nakanishi; Yuichi Ikuhara; Masahiro Hirano; Hideo Hosono; Kunihito Koumoto
Journal:  Nat Mater       Date:  2007-01-21       Impact factor: 43.841

4.  Interparticle coupling effect on the surface plasmon resonance of gold nanoparticles: from theory to applications.

Authors:  Sujit Kumar Ghosh; Tarasankar Pal
Journal:  Chem Rev       Date:  2007-11       Impact factor: 60.622

5.  Circuits with light at nanoscales: optical nanocircuits inspired by metamaterials.

Authors:  Nader Engheta
Journal:  Science       Date:  2007-09-21       Impact factor: 47.728

6.  Localization, interactions, and the metal-insulator transition.

Authors:  R C Dynes; P A Lee
Journal:  Science       Date:  1984-01-27       Impact factor: 47.728

7.  The missing memristor found.

Authors:  Dmitri B Strukov; Gregory S Snider; Duncan R Stewart; R Stanley Williams
Journal:  Nature       Date:  2008-05-01       Impact factor: 49.962

8.  Transport properties, thermodynamic properties, and electronic structure of SrRuO3.

Authors: 
Journal:  Phys Rev B Condens Matter       Date:  1996-02-15

9.  Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3.

Authors:  Krzysztof Szot; Wolfgang Speier; Gustav Bihlmayer; Rainer Waser
Journal:  Nat Mater       Date:  2006-03-26       Impact factor: 43.841

10.  Atomic structure of conducting nanofilaments in TiO2 resistive switching memory.

Authors:  Deok-Hwang Kwon; Kyung Min Kim; Jae Hyuck Jang; Jong Myeong Jeon; Min Hwan Lee; Gun Hwan Kim; Xiang-Shu Li; Gyeong-Su Park; Bora Lee; Seungwu Han; Miyoung Kim; Cheol Seong Hwang
Journal:  Nat Nanotechnol       Date:  2010-01-17       Impact factor: 39.213

  10 in total
  3 in total

1.  Random materials: Localization on the nanoscale.

Authors:  Takeshi Egami
Journal:  Nat Nanotechnol       Date:  2011-04       Impact factor: 39.213

2.  Memristive devices for computing.

Authors:  J Joshua Yang; Dmitri B Strukov; Duncan R Stewart
Journal:  Nat Nanotechnol       Date:  2013-01       Impact factor: 39.213

3.  Dynamic-load-enabled ultra-low power multiple-state RRAM devices.

Authors:  Xiang Yang; I-Wei Chen
Journal:  Sci Rep       Date:  2012-10-17       Impact factor: 4.379

  3 in total

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