Literature DB >> 21328488

Low-power high-performance non-volatile memory on a flexible substrate with excellent endurance.

Chun-Hu Cheng1, Fon-Shan Yeh, Albert Chin.   

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Year:  2010        PMID: 21328488     DOI: 10.1002/adma.201002946

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


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  8 in total

1.  Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism.

Authors:  Ye Zhou; Su-Ting Han; Prashant Sonar; V A L Roy
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

2.  Resistive switching behavior in Lu2O3 thin film for advanced flexible memory applications.

Authors:  Somnath Mondal; Jim-Long Her; Keiichi Koyama; Tung-Ming Pan
Journal:  Nanoscale Res Lett       Date:  2014-01-03       Impact factor: 4.703

3.  Cellulose nanofiber paper as an ultra flexible nonvolatile memory.

Authors:  Kazuki Nagashima; Hirotaka Koga; Umberto Celano; Fuwei Zhuge; Masaki Kanai; Sakon Rahong; Gang Meng; Yong He; Jo De Boeck; Malgorzata Jurczak; Wilfried Vandervorst; Takuya Kitaoka; Masaya Nogi; Takeshi Yanagida
Journal:  Sci Rep       Date:  2014-07-02       Impact factor: 4.379

4.  SnO2 highly sensitive CO gas sensor based on quasi-molecular-imprinting mechanism design.

Authors:  Chenjia Li; Meng Lv; Jialin Zuo; Xintang Huang
Journal:  Sensors (Basel)       Date:  2015-02-05       Impact factor: 3.576

5.  Physically Transient Memory on a Rapidly Dissoluble Paper for Security Application.

Authors:  Hagyoul Bae; Byung-Hyun Lee; Dongil Lee; Myeong-Lok Seol; Daewon Kim; Jin-Woo Han; Choong-Ki Kim; Seung-Bae Jeon; Daechul Ahn; Sang-Jae Park; Jun-Young Park; Yang-Kyu Choi
Journal:  Sci Rep       Date:  2016-12-05       Impact factor: 4.379

6.  A comprehensive investigation of MoO3 based resistive random access memory.

Authors:  Jameela Fatheema; Tauseef Shahid; Mohammad Ali Mohammad; Amjad Islam; Fouzia Malik; Deji Akinwande; Syed Rizwan
Journal:  RSC Adv       Date:  2020-05-20       Impact factor: 4.036

7.  Functionalized graphitic carbon nitride for metal-free, flexible and rewritable nonvolatile memory device via direct laser-writing.

Authors:  Fei Zhao; Huhu Cheng; Yue Hu; Long Song; Zhipan Zhang; Lan Jiang; Liangti Qu
Journal:  Sci Rep       Date:  2014-07-30       Impact factor: 4.379

8.  Integration scheme of nanoscale resistive switching memory using bottom-up processes at room temperature for high-density memory applications.

Authors:  Un-Bin Han; Jang-Sik Lee
Journal:  Sci Rep       Date:  2016-07-01       Impact factor: 4.379

  8 in total

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