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Literature DB >> 21328484

Non-volatile photochemical gating of an epitaxial graphene/polymer heterostructure.

Samuel Lara-Avila¹, Kasper Moth-Poulsen, Rositza Yakimova, Thomas Bjørnholm, Vladimir Fal'ko, Alexander Tzalenchuk, Sergey Kubatkin.

Abstract

Entities: Chemical

Mesh：

Substances：
Polymers
Graphite

Year: 2011 PMID： 21328484 DOI： 10.1002/adma.201003993

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

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Cited

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15 in total

1. Quantum Hall resistance standard in graphene devices under relaxed experimental conditions.

Authors: R Ribeiro-Palau; F Lafont; J Brun-Picard; D Kazazis; A Michon; F Cheynis; O Couturaud; C Consejo; B Jouault; W Poirier; F Schopfer
Journal: Nat Nanotechnol Date: 2015-09-07 Impact factor: 39.213

2. Examining epitaxial graphene surface conductivity and quantum Hall device stability with Parylene passivation.

Authors: Albert F Rigosi; Chieh-I Liu; Bi Yi Wu; Hsin-Yen Lee; Mattias Kruskopf; Yanfei Yang; Heather M Hill; Jiuning Hu; Emily G Bittle; Jan Obrzut; Angela R Hight Walker; Randolph E Elmquist; David B Newell
Journal: Microelectron Eng Date: 2018-03-14 Impact factor: 2.523

3. Atypical Quantized Resistances in Millimeter-Scale Epitaxial Graphene p-n Junctions.

Authors: Albert F Rigosi; Dinesh Patel; Martina Marzano; Mattias Kruskopf; Heather M Hill; Hanbyul Jin; Jiuning Hu; Angela R Hight Walker; Massimo Ortolano; Luca Callegaro; Chi-Te Liang; David B Newell
Journal: Carbon N Y Date: 2019 Impact factor: 9.594

4. The Quantum Hall Effect in the Era of the New SI.

Authors: Albert F Rigosi; Randolph E Elmquist
Journal: Semicond Sci Technol Date: 2019 Impact factor: 2.352

5. Development of gateless quantum Hall checkerboard p-n junction devices.

Authors: Dinesh K Patel; Martina Marzano; Chieh-I Liu; Mattias Kruskopf; Randolph E Elmquist; Chi-Te Liang; Albert F Rigosi
Journal: J Phys D Appl Phys Date: 2020 Impact factor: 3.207

6. Preservation of Surface Conductivity and Dielectric Loss Tangent in Large-Scale, Encapsulated Epitaxial Graphene Measured by Noncontact Microwave Cavity Perturbations.

Authors: Albert F Rigosi; Nicholas R Glavin; Chieh-I Liu; Yanfei Yang; Jan Obrzut; Heather M Hill; Jiuning Hu; Hsin-Yen Lee; Angela R Hight Walker; Curt A Richter; Randolph E Elmquist; David B Newell
Journal: Small Date: 2017-05-19 Impact factor: 13.281

Non-volatile photochemical gating of an epitaxial graphene/polymer heterostructure.

1. Quantum Hall resistance standard in graphene devices under relaxed experimental conditions.

2. Examining epitaxial graphene surface conductivity and quantum Hall device stability with Parylene passivation.

3. Atypical Quantized Resistances in Millimeter-Scale Epitaxial Graphene p-n Junctions.

4. The Quantum Hall Effect in the Era of the New SI.

5. Development of gateless quantum Hall checkerboard p-n junction devices.

6. Preservation of Surface Conductivity and Dielectric Loss Tangent in Large-Scale, Encapsulated Epitaxial Graphene Measured by Noncontact Microwave Cavity Perturbations.

7. Analytical determination of atypical quantized resistances in graphene p-n junctions.

8. Magnetic quantum ratchet effect in graphene.

9. Comparison between NIST Graphene and AIST GaAs Quantized Hall Devices.

10. Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide.