Literature DB >> 29881131

Examining epitaxial graphene surface conductivity and quantum Hall device stability with Parylene passivation.

Albert F Rigosi1, Chieh-I Liu1,2, Bi Yi Wu1,2, Hsin-Yen Lee1,3, Mattias Kruskopf1,4, Yanfei Yang1,4, Heather M Hill1, Jiuning Hu1, Emily G Bittle1, Jan Obrzut1, Angela R Hight Walker1, Randolph E Elmquist1, David B Newell1.   

Abstract

Homogeneous, single-crystal, monolayer epitaxial graphene (EG) is the one of most promising candidates for the advancement of quantized Hall resistance (QHR) standards. A remaining challenge for the electrical characterization of EG-based quantum Hall devices as a useful tool for metrology is that they are electrically unstable when exposed to air due to the adsorption of and interaction with atmospheric molecular dopants. The resulting changes in the charge carrier density become apparent by variations in the surface conductivity, the charge carrier mobility, and may result in a transition from n-type to p-type conductivity. This work evaluates the use of Parylene C and Parylene N as passivation layers for EG. Electronic transport of EG quantum Hall devices and non-contact microwave perturbation measurements of millimeter-sized areas of EG are both performed on bare and Parylene coated samples to test the efficacy of the passivation layers. The reported results, showing a significant improvement in passivation due to Parylene deposition, suggest a method for the mass production of millimeter-scale graphene devices with stable electrical properties.

Entities:  

Keywords:  Parylene; epitaxial graphene; quantum Hall effect; surface conductivity; transport mobility

Year:  2018        PMID: 29881131      PMCID: PMC5986095          DOI: 10.1016/j.mee.2018.03.004

Source DB:  PubMed          Journal:  Microelectron Eng        ISSN: 0167-9317            Impact factor:   2.523


  17 in total

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Journal:  Nat Nanotechnol       Date:  2015-09-07       Impact factor: 39.213

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3.  Non-volatile photochemical gating of an epitaxial graphene/polymer heterostructure.

Authors:  Samuel Lara-Avila; Kasper Moth-Poulsen; Rositza Yakimova; Thomas Bjørnholm; Vladimir Fal'ko; Alexander Tzalenchuk; Sergey Kubatkin
Journal:  Adv Mater       Date:  2011-01-07       Impact factor: 30.849

4.  Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial graphene.

Authors:  Matthew J Hollander; Michael Labella; Zachary R Hughes; Michael Zhu; Kathleen A Trumbull; Randal Cavalero; David W Snyder; Xiaojun Wang; Euichul Hwang; Suman Datta; Joshua A Robinson
Journal:  Nano Lett       Date:  2011-08-04       Impact factor: 11.189

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Review 6.  Toward Environmentally Robust Organic Electronics: Approaches and Applications.

Authors:  Eun Kwang Lee; Moo Yeol Lee; Cheol Hee Park; Hae Rang Lee; Joon Hak Oh
Journal:  Adv Mater       Date:  2017-09-27       Impact factor: 30.849

7.  Seeding atomic layer deposition of high-k dielectrics on epitaxial graphene with organic self-assembled monolayers.

Authors:  Justice M P Alaboson; Qing Hua Wang; Jonathan D Emery; Albert L Lipson; Michael J Bedzyk; Jeffrey W Elam; Michael J Pellin; Mark C Hersam
Journal:  ACS Nano       Date:  2011-05-12       Impact factor: 15.881

8.  Preservation of Surface Conductivity and Dielectric Loss Tangent in Large-Scale, Encapsulated Epitaxial Graphene Measured by Noncontact Microwave Cavity Perturbations.

Authors:  Albert F Rigosi; Nicholas R Glavin; Chieh-I Liu; Yanfei Yang; Jan Obrzut; Heather M Hill; Jiuning Hu; Hsin-Yen Lee; Angela R Hight Walker; Curt A Richter; Randolph E Elmquist; David B Newell
Journal:  Small       Date:  2017-05-19       Impact factor: 13.281

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Journal:  Nat Nanotechnol       Date:  2010-01-17       Impact factor: 39.213

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  4 in total

1.  Atypical Quantized Resistances in Millimeter-Scale Epitaxial Graphene p-n Junctions.

Authors:  Albert F Rigosi; Dinesh Patel; Martina Marzano; Mattias Kruskopf; Heather M Hill; Hanbyul Jin; Jiuning Hu; Angela R Hight Walker; Massimo Ortolano; Luca Callegaro; Chi-Te Liang; David B Newell
Journal:  Carbon N Y       Date:  2019       Impact factor: 9.594

2.  The Quantum Hall Effect in the Era of the New SI.

Authors:  Albert F Rigosi; Randolph E Elmquist
Journal:  Semicond Sci Technol       Date:  2019       Impact factor: 2.352

3.  Elucidating Charge Transport Mechanisms in Cellulose-Stabilized Graphene Inks.

Authors:  Ana C M de Moraes; Jan Obrzut; Vinod K Sangwan; Julia R Downing; Lindsay E Chaney; Dinesh Patel; Randolph E Elmquist; Mark C Hersam
Journal:  J Mater Chem C Mater       Date:  2020       Impact factor: 7.393

4.  Quantum Hall device data monitoring following encapsulating polymer deposition.

Authors:  Albert F Rigosi; Chieh-I Liu; Bi Yi Wu; Hsin-Yen Lee; Mattias Kruskopf; Yanfei Yang; Heather M Hill; Jiuning Hu; Emily G Bittle; Jan Obrzut; Angela R Hight Walker; Randolph E Elmquist; David B Newell
Journal:  Data Brief       Date:  2018-08-30
  4 in total

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