Literature DB >> 19788272

Making Mn substitutional impurities in InAs using a scanning tunneling microscope.

Young Jae Song1, Steven C Erwin, Gregory M Rutter, Phillip N First, Nikolai B Zhitenev, Joseph A Stroscio.   

Abstract

We describe in detail an atom-by-atom exchange manipulation technique using a scanning tunneling microscope probe. As-deposited Mn adatoms (Mn(ad)) are exchanged one-by-one with surface In atoms (In(su)) to create a Mn surface-substitutional (Mn(In)) and an exchanged In adatom (In(ad)) by an electron tunneling induced reaction Mn(ad) + In(su) --> Mn(In) + In(ad) on the InAs(110) surface. In combination with density-functional theory and high resolution scanning tunneling microscopy imaging, we have identified the reaction pathway for the Mn and In atom exchange.

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Year:  2009        PMID: 19788272     DOI: 10.1021/nl902575g

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  1 in total

1.  Single dopants in semiconductors.

Authors:  Paul M Koenraad; Michael E Flatté
Journal:  Nat Mater       Date:  2011-02       Impact factor: 43.841

  1 in total

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