Literature DB >> 21230853

Dielectric breakdown of Mott insulators in dynamical mean-field theory.

Martin Eckstein1, Takashi Oka, Philipp Werner.   

Abstract

Using nonequilibrium dynamical mean-field theory, we compute the time evolution of the current in a Mott insulator after a strong electric field is turned on. We observe the formation of a quasistationary state in which the current is almost time independent although the system is constantly excited. At moderately strong fields this state is stable for quite long times. The stationary current exhibits a threshold behavior as a function of the field, in which the threshold increases with the Coulomb interaction and vanishes as the metal-insulator transition is approached.

Entities:  

Year:  2010        PMID: 21230853     DOI: 10.1103/PhysRevLett.105.146404

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  4 in total

1.  Avalanche breakdown in GaTa4Se(8-x)Te(x) narrow-gap Mott insulators.

Authors:  V Guiot; L Cario; E Janod; B Corraze; V Ta Phuoc; M Rozenberg; P Stoliar; T Cren; D Roditchev
Journal:  Nat Commun       Date:  2013       Impact factor: 14.919

2.  Subnanosecond incubation times for electric-field-induced metallization of a correlated electron oxide.

Authors:  Justin S Brockman; Li Gao; Brian Hughes; Charles T Rettner; Mahesh G Samant; Kevin P Roche; Stuart S P Parkin
Journal:  Nat Nanotechnol       Date:  2014-04-20       Impact factor: 39.213

3.  Field-Driven Mott Gap Collapse and Resistive Switch in Correlated Insulators.

Authors:  G Mazza; A Amaricci; M Capone; M Fabrizio
Journal:  Phys Rev Lett       Date:  2016-10-20       Impact factor: 9.161

4.  Non-linear quantum-classical scheme to simulate non-equilibrium strongly correlated fermionic many-body dynamics.

Authors:  J M Kreula; S R Clark; D Jaksch
Journal:  Sci Rep       Date:  2016-09-09       Impact factor: 4.379

  4 in total

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