Literature DB >> 21209675

Enhanced lateral photovoltaic effect observed in CdSe quantum dots embedded structure of Zn/CdSe/Si.

Tian Lan1, Shuai Liu, Hui Wang.   

Abstract

The quantum dots (QDs) system has been intensively studied for decades owing to its huge potential for applications. In this Letter, we report a lateral photovoltaic effect (LPE) with a large sensitivity observed in CdSe QDs embedded structure of Zn/CdSe/Si. This result not only enriches applications of the QDs system but also opens a new window to study the carrier dynamics of the QDs system.

Entities:  

Year:  2011        PMID： 21209675     DOI： 10.1364/OL.36.000025

Source DB:  PubMed          Journal:  Opt Lett        ISSN： 0146-9592            Impact factor:   3.776


  3 in total

1.  Nonvolatile and tunable switching of lateral photo-voltage triggered by laser and electric pulse in metal dusted metal-oxide-semiconductor structures.

Authors:  Peiqi Zhou; Zhikai Gan; Xu Huang; Chunlian Mei; Meizhen Huang; Yuxing Xia; Hui Wang
Journal:  Sci Rep       Date:  2016-08-18       Impact factor: 4.379

2.  Localized surface plasmon resonances dominated giant lateral photovoltaic effect observed in ZnO/Ag/Si nanostructure.

Authors:  Ke Zhang; Hui Wang; Zhikai Gan; Peiqi Zhou; Chunlian Mei; Xu Huang; Yuxing Xia
Journal:  Sci Rep       Date:  2016-03-11       Impact factor: 4.379

3.  Size-dependent magnetic tuning of lateral photovoltaic effect in nonmagnetic Si-based Schottky junctions.

Authors:  Peiqi Zhou; Zhikai Gan; Xu Huang; Chunlian Mei; Yuxing Xia; Hui Wang
Journal:  Sci Rep       Date:  2017-04-11       Impact factor: 4.379
  3 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.