| Literature DB >> 20730812 |
Jeongho Park1, William C Mitchel, Lawrence Grazulis, Howard E Smith, Kurt G Eyink, John J Boeckl, David H Tomich, Shanee D Pacley, John E Hoelscher.
Abstract
A novel growth method (carbon molecular beam epitaxy (CMBE)) has been developed to produce high-quality and large-area epitaxial graphene. This method demonstrates significantly improved controllability of the graphene growth. CMBE with C(60) produces AB stacked graphene, while growth with the graphite filament results in non-Bernal stacked graphene layers with a Dirac-like electronic structure, which is similar to graphene grown by thermal decomposition on SiC (000-1).Entities:
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Year: 2010 PMID： 20730812 DOI： 10.1002/adma.201000756
Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849