Literature DB >> 22094694

A role for graphene in silicon-based semiconductor devices.

Kinam Kim1, Jae-Young Choi, Taek Kim, Seong-Ho Cho, Hyun-Jong Chung.   

Abstract

As silicon-based electronics approach the limit of improvements to performance and capacity through dimensional scaling, attention in the semiconductor field has turned to graphene, a single layer of carbon atoms arranged in a honeycomb lattice. Its high mobility of charge carriers (electrons and holes) could lead to its use in the next generation of high-performance devices. Graphene is unlikely to replace silicon completely, however, because of the poor on/off current ratio resulting from its zero bandgap. But it could be used to improve silicon-based devices, in particular in high-speed electronics and optical modulators.
© 2011 Macmillan Publishers Limited. All rights reserved

Entities:  

Year:  2011        PMID: 22094694     DOI: 10.1038/nature10680

Source DB:  PubMed          Journal:  Nature        ISSN: 0028-0836            Impact factor:   49.962


  59 in total

1.  Direct chemical vapor deposition of graphene on dielectric surfaces.

Authors:  Ariel Ismach; Clara Druzgalski; Samuel Penwell; Adam Schwartzberg; Maxwell Zheng; Ali Javey; Jeffrey Bokor; Yuegang Zhang
Journal:  Nano Lett       Date:  2010-05-12       Impact factor: 11.189

2.  Boron nitride substrates for high-quality graphene electronics.

Authors:  C R Dean; A F Young; I Meric; C Lee; L Wang; S Sorgenfrei; K Watanabe; T Taniguchi; P Kim; K L Shepard; J Hone
Journal:  Nat Nanotechnol       Date:  2010-08-22       Impact factor: 39.213

3.  Current saturation in zero-bandgap, top-gated graphene field-effect transistors.

Authors:  Inanc Meric; Melinda Y Han; Andrea F Young; Barbaros Ozyilmaz; Philip Kim; Kenneth L Shepard
Journal:  Nat Nanotechnol       Date:  2008-09-21       Impact factor: 39.213

4.  Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator.

Authors:  William M Green; Michael J Rooks; Lidija Sekaric; Yurii A Vlasov
Journal:  Opt Express       Date:  2007-12-10       Impact factor: 3.894

5.  Doping graphene with metal contacts.

Authors:  G Giovannetti; P A Khomyakov; G Brocks; V M Karpan; J van den Brink; P J Kelly
Journal:  Phys Rev Lett       Date:  2008-07-10       Impact factor: 9.161

6.  Electronics: industry-compatible graphene transistors.

Authors:  Frank Schwierz
Journal:  Nature       Date:  2011-04-07       Impact factor: 49.962

7.  Passivation of metal surface states: microscopic origin for uniform monolayer graphene by low temperature chemical vapor deposition.

Authors:  Insu Jeon; Heejun Yang; Sung-Hoon Lee; Jinseong Heo; David H Seo; Jaikwang Shin; U-In Chung; Zheong Gou Kim; Hyun-Jong Chung; Sunae Seo
Journal:  ACS Nano       Date:  2011-02-10       Impact factor: 15.881

8.  Experimental observation of the quantum Hall effect and Berry's phase in graphene.

Authors:  Yuanbo Zhang; Yan-Wen Tan; Horst L Stormer; Philip Kim
Journal:  Nature       Date:  2005-11-10       Impact factor: 49.962

9.  Large scale growth and characterization of atomic hexagonal boron nitride layers.

Authors:  Li Song; Lijie Ci; Hao Lu; Pavel B Sorokin; Chuanhong Jin; Jie Ni; Alexander G Kvashnin; Dmitry G Kvashnin; Jun Lou; Boris I Yakobson; Pulickel M Ajayan
Journal:  Nano Lett       Date:  2010-08-11       Impact factor: 11.189

10.  Atomic structure of graphene on SiO2.

Authors:  Masa Ishigami; J H Chen; W G Cullen; M S Fuhrer; E D Williams
Journal:  Nano Lett       Date:  2007-05-11       Impact factor: 11.189

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  41 in total

1.  Graphene synthesis: On-the-spot growth.

Authors:  Li Lin; Zhongfan Liu
Journal:  Nat Mater       Date:  2015-11-23       Impact factor: 43.841

2.  Van der Waals heterostructures.

Authors:  A K Geim; I V Grigorieva
Journal:  Nature       Date:  2013-07-25       Impact factor: 49.962

3.  A roadmap for graphene.

Authors:  K S Novoselov; V I Fal'ko; L Colombo; P R Gellert; M G Schwab; K Kim
Journal:  Nature       Date:  2012-10-11       Impact factor: 49.962

4.  Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment.

Authors:  A K M Newaz; Yevgeniy S Puzyrev; Bin Wang; Sokrates T Pantelides; Kirill I Bolotin
Journal:  Nat Commun       Date:  2012-03-13       Impact factor: 14.919

Review 5.  Synthetic nanoelectronic probes for biological cells and tissues.

Authors:  Bozhi Tian; Charles M Lieber
Journal:  Annu Rev Anal Chem (Palo Alto Calif)       Date:  2013-02-28       Impact factor: 10.745

6.  Ultrafast growth of single-crystal graphene assisted by a continuous oxygen supply.

Authors:  Xiaozhi Xu; Zhihong Zhang; Lu Qiu; Jianing Zhuang; Liang Zhang; Huan Wang; Chongnan Liao; Huading Song; Ruixi Qiao; Peng Gao; Zonghai Hu; Lei Liao; Zhimin Liao; Dapeng Yu; Enge Wang; Feng Ding; Hailin Peng; Kaihui Liu
Journal:  Nat Nanotechnol       Date:  2016-08-08       Impact factor: 39.213

7.  Graphene transistor as a probe for streaming potential.

Authors:  A K M Newaz; D A Markov; D Prasai; K I Bolotin
Journal:  Nano Lett       Date:  2012-05-15       Impact factor: 11.189

8.  Sub-10 nm gate length graphene transistors: operating at terahertz frequencies with current saturation.

Authors:  Jiaxin Zheng; Lu Wang; Ruge Quhe; Qihang Liu; Hong Li; Dapeng Yu; Wai-Ning Mei; Junjie Shi; Zhengxiang Gao; Jing Lu
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

9.  Excellent electrical conductivity of the exfoliated and fluorinated hexagonal boron nitride nanosheets.

Authors:  Yafang Xue; Qian Liu; Guanjie He; Kaibing Xu; Lin Jiang; Xianghua Hu; Junqing Hu
Journal:  Nanoscale Res Lett       Date:  2013-01-24       Impact factor: 4.703

10.  Theoretical investigation of graphene-based photonic modulators.

Authors:  Jacek Gosciniak; Dawn T H Tan
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

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