Strong and tunable spin--orbit coupling of one-dimensional holes in Ge/Si core/shell nanowires.

We investigate the low-temperature magneto-transport properties of individual Ge/Si core/shell nanowires. Negative magneto-conductance was observed, which is a signature of one-dimensional weak antilocalization of holes in the presence of strong spin--orbit coupling. The temperature and back gate dependences of phase coherence length, spin--orbit relaxation time, and background conductance were studied. Specifically, we show that the spin--orbit coupling strength can be modulated by more than five folds with an external electric field. These results suggest the Ge/Si nanowire system possesses strong and tunable spin--orbit interactions and may serve as a candidate for spintronics applications.