| Literature DB >> 20672091 |
M V Chursanova, V M Dzhagan, V O Yukhymchuk, O S Lytvyn, M Ya Valakh, I A Khodasevich, D Lehmann, D R T Zahn, C Waurisch, S G Hickey.
Abstract
Nanostructured silver films have been prepared by thermal deposition on silicon, and their properties as SERS substrates investigated. The optimal conditions of the post-growth annealing of the substrates were established. Atomic force microscopy study revealed that the silver films with relatively dense and homogeneous arrays of 60-80-nm high pyramidal nanoislands are the most efficient for SERS of both organic dye and inorganic nanoparticles analytes. The noticeable enhancement of the Raman signal from colloidal nanoparticles with the help of silver island films is reported for the first time.Entities:
Year: 2009 PMID: 20672091 PMCID: PMC2893998 DOI: 10.1007/s11671-009-9496-2
Source DB: PubMed Journal: Nanoscale Res Lett ISSN: 1556-276X Impact factor: 4.703
Figure 1AFM images and corresponding surface profiles of Ag/Si nanoisland films: unannealed film a and films annealed in air at 550°C for b 15 and c 30 min
Figure 2Raman spectra of 10−5M Rh6G on Ag/Si nanoisland films annealed at 550°C and different annealing times. Inset shows the lower frequency peaks at 613 and 775 cm−1
Figure 3AFM images and corresponding surface profiles of Ag/Si nanoisland films annealed in air during 15 min at a 350°C, b 420°C, c 550°C and d 650°C
Figure 4Raman spectra of 10−5M Rh6G measured on Ag/Si nanoisland films, obtained by annealing at different temperatures for 15 min
Figure 5Raman spectra of 10−6M CuTMPy measured on Ag/Si nanoisland films, annealing time 15 min
Figure 6Raman spectra of CdSe/ZnS NPs on unannealed Ag/Si substrates and nanoisland films formed by annealing for 15 min at 430 and 520°C
Figure 7Normalized Raman spectra of the same NPs sample with plasmon enhancement (grey) and without it (black). The SERS spectrum is same as in Fig. 6 for Tann = 430°C. The ordinary spectrum was obtained by deposition of NPs from a highly concentrated solution onto the bare Si surface