Literature DB >> 20482199

Universal decay cascade model for dynamic quantum dot initialization.

Vyacheslavs Kashcheyevs1, Bernd Kaestner.   

Abstract

Dynamic quantum dots can be formed by time-dependent electrostatic potentials, such as in gate- or surface-acoustic-wave-driven electron pumps. In this work we propose and quantify a scheme to initialize quantum dots with a controllable number of electrons. It is based on a rapid increase of the electron potential energy and simultaneous decoupling from the source lead. The full probability distribution for the final number of captured electrons is obtained by solving a master equation for stochastic cascade of single electron escape events. We derive an explicit fitting formula to extract the sequence of decay rate ratios from the measurements of averaged current in a periodically driven device. This provides a device-specific fingerprint which allows us to compare different architectures, and predict the upper limits of initialization accuracy from low precision measurements.

Year:  2010        PMID: 20482199     DOI: 10.1103/PhysRevLett.104.186805

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  7 in total

1.  Towards a quantum representation of the ampere using single electron pumps.

Authors:  S P Giblin; M Kataoka; J D Fletcher; P See; T J B M Janssen; J P Griffiths; G A C Jones; I Farrer; D A Ritchie
Journal:  Nat Commun       Date:  2012-07-03       Impact factor: 14.919

2.  Gigahertz quantized charge pumping in graphene quantum dots.

Authors:  M R Connolly; K L Chiu; S P Giblin; M Kataoka; J D Fletcher; C Chua; J P Griffiths; G A C Jones; V I Fal'ko; C G Smith; T J B M Janssen
Journal:  Nat Nanotechnol       Date:  2013-05-12       Impact factor: 39.213

3.  Dynamics of a single-atom electron pump.

Authors:  J van der Heijden; G C Tettamanzi; S Rogge
Journal:  Sci Rep       Date:  2017-03-15       Impact factor: 4.379

4.  High-accuracy current generation in the nanoampere regime from a silicon single-trap electron pump.

Authors:  Gento Yamahata; Stephen P Giblin; Masaya Kataoka; Takeshi Karasawa; Akira Fujiwara
Journal:  Sci Rep       Date:  2017-03-21       Impact factor: 4.379

Review 5.  Unusual Quantum Transport Mechanisms in Silicon Nano-Devices.

Authors:  Giuseppe Carlo Tettamanzi
Journal:  Entropy (Basel)       Date:  2019-07-11       Impact factor: 2.524

6.  A two-atom electron pump.

Authors:  B Roche; R-P Riwar; B Voisin; E Dupont-Ferrier; R Wacquez; M Vinet; M Sanquer; J Splettstoesser; X Jehl
Journal:  Nat Commun       Date:  2013       Impact factor: 14.919

7.  Gigahertz single-trap electron pumps in silicon.

Authors:  Gento Yamahata; Katsuhiko Nishiguchi; Akira Fujiwara
Journal:  Nat Commun       Date:  2014-10-06       Impact factor: 14.919

  7 in total

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