Literature DB >> 23666448

Gigahertz quantized charge pumping in graphene quantum dots.

M R Connolly1, K L Chiu, S P Giblin, M Kataoka, J D Fletcher, C Chua, J P Griffiths, G A C Jones, V I Fal'ko, C G Smith, T J B M Janssen.   

Abstract

Single-electron pumps are set to revolutionize electrical metrology by enabling the ampere to be redefined in terms of the elementary charge of an electron. Pumps based on lithographically fixed tunnel barriers in mesoscopic metallic systems and normal/superconducting hybrid turnstiles can reach very small error rates, but only at megahertz pumping speeds that correspond to small currents of the order of picoamperes. Tunable barrier pumps in semiconductor structures are operated at gigahertz frequencies, but the theoretical treatment of the error rate is more complex and only approximate predictions are available. Here, we present a monolithic, fixed-barrier single-electron pump made entirely from graphene that performs at frequencies up to several gigahertz. Combined with the record-high accuracy of the quantum Hall effect and proximity-induced Josephson junctions, quantized-current generation brings an all-graphene closure of the quantum metrological triangle within reach. Envisaged applications for graphene charge pumps outside quantum metrology include single-photon generation via electron-hole recombination in electrostatically doped bilayer graphene reservoirs, single Dirac fermion emission in relativistic electron quantum optics and read-out of spin-based graphene qubits in quantum information processing.

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Year:  2013        PMID: 23666448     DOI: 10.1038/nnano.2013.73

Source DB:  PubMed          Journal:  Nat Nanotechnol        ISSN: 1748-3387            Impact factor:   39.213


  18 in total

1.  Photon-assisted tunneling in electron pumps

Authors: 
Journal:  Phys Rev Lett       Date:  2000-05-29       Impact factor: 9.161

2.  Boron nitride substrates for high-quality graphene electronics.

Authors:  C R Dean; A F Young; I Meric; C Lee; L Wang; S Sorgenfrei; K Watanabe; T Taniguchi; P Kim; K L Shepard; J Hone
Journal:  Nat Nanotechnol       Date:  2010-08-22       Impact factor: 39.213

3.  The focusing of electron flow and a Veselago lens in graphene p-n junctions.

Authors:  Vadim V Cheianov; Vladimir Fal'ko; B L Altshuler
Journal:  Science       Date:  2007-03-02       Impact factor: 47.728

4.  Large area, few-layer graphene films on arbitrary substrates by chemical vapor deposition.

Authors:  Alfonso Reina; Xiaoting Jia; John Ho; Daniel Nezich; Hyungbin Son; Vladimir Bulovic; Mildred S Dresselhaus; Jing Kong
Journal:  Nano Lett       Date:  2009-01       Impact factor: 11.189

5.  Efficient narrow-band light emission from a single carbon nanotube p-n diode.

Authors:  Thomas Mueller; Megumi Kinoshita; Mathias Steiner; Vasili Perebeinos; Ageeth A Bol; Damon B Farmer; Phaedon Avouris
Journal:  Nat Nanotechnol       Date:  2009-11-15       Impact factor: 39.213

6.  Direct observation of a widely tunable bandgap in bilayer graphene.

Authors:  Yuanbo Zhang; Tsung-Ta Tang; Caglar Girit; Zhao Hao; Michael C Martin; Alex Zettl; Michael F Crommie; Y Ron Shen; Feng Wang
Journal:  Nature       Date:  2009-06-11       Impact factor: 49.962

7.  Semiconductor quantized voltage source.

Authors:  F Hohls; A C Welker; Ch Leicht; L Fricke; B Kaestner; P Mirovsky; A Müller; K Pierz; U Siegner; H W Schumacher
Journal:  Phys Rev Lett       Date:  2012-07-31       Impact factor: 9.161

8.  Coherence and indistinguishability of single electrons emitted by independent sources.

Authors:  E Bocquillon; V Freulon; J-M Berroir; P Degiovanni; B Plaçais; A Cavanna; Y Jin; G Fève
Journal:  Science       Date:  2013-01-24       Impact factor: 47.728

9.  Spin-polarized quantum pumping in bilayer graphene.

Authors:  Jun-Feng Liu; K S Chan
Journal:  Nanotechnology       Date:  2011-09-02       Impact factor: 3.874

10.  Towards a quantum resistance standard based on epitaxial graphene.

Authors:  Alexander Tzalenchuk; Samuel Lara-Avila; Alexei Kalaboukhov; Sara Paolillo; Mikael Syväjärvi; Rositza Yakimova; Olga Kazakova; T J B M Janssen; Vladimir Fal'ko; Sergey Kubatkin
Journal:  Nat Nanotechnol       Date:  2010-01-17       Impact factor: 39.213

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  4 in total

1.  AC signal characterization for optimization of a CMOS single-electron pump.

Authors:  Roy Murray; Justin K Perron; M D Stewart; Neil M Zimmerman
Journal:  Nanotechnology       Date:  2018-02-09       Impact factor: 3.874

2.  Impact of the gate geometry on adiabatic charge pumping in InAs double quantum dots.

Authors:  Sung Jin An; Myung-Ho Bae; Myoung-Jae Lee; Man Suk Song; Morten H Madsen; Jesper Nygård; Christian Schönenberger; Andreas Baumgartner; Jungpil Seo; Minkyung Jung
Journal:  Nanoscale Adv       Date:  2022-08-11

3.  Tuning inter-dot tunnel coupling of an etched graphene double quantum dot by adjacent metal gates.

Authors:  Da Wei; Hai-Ou Li; Gang Cao; Gang Luo; Zhi-Xiong Zheng; Tao Tu; Ming Xiao; Guang-Can Guo; Hong-Wen Jiang; Guo-Ping Guo
Journal:  Sci Rep       Date:  2013-11-11       Impact factor: 4.379

4.  Three-waveform bidirectional pumping of single electrons with a silicon quantum dot.

Authors:  Tuomo Tanttu; Alessandro Rossi; Kuan Yen Tan; Akseli Mäkinen; Kok Wai Chan; Andrew S Dzurak; Mikko Möttönen
Journal:  Sci Rep       Date:  2016-11-08       Impact factor: 4.379

  4 in total

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