| Literature DB >> 20366736 |
F Rodolakis1, P Hansmann, J-P Rueff, A Toschi, M W Haverkort, G Sangiovanni, A Tanaka, T Saha-Dasgupta, O K Andersen, K Held, M Sikora, I Alliot, J-P Itié, F Baudelet, P Wzietek, P Metcalf, M Marsi.
Abstract
The changes in the electronic structure of V2O3 across the metal-insulator transition induced by temperature, doping, and pressure are identified using high resolution x-ray absorption spectroscopy at the V pre-K edge. Contrary to what has been taken for granted so far, the metallic phase reached under pressure is shown to differ from the one obtained by changing doping or temperature. Using a novel computational scheme, we relate this effect to the role and occupancy of the a{1g} orbitals. This finding unveils the inequivalence of different routes across the Mott transition in V2O3.Entities:
Year: 2010 PMID: 20366736 DOI: 10.1103/PhysRevLett.104.047401
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161