Literature DB >> 20366723

Spin-dependent recombination between phosphorus donors in silicon and Si/SiO{2} interface states investigated with pulsed electrically detected electron double resonance.

Felix Hoehne1, Hans Huebl, Bastian Galler, Martin Stutzmann, Martin S Brandt.   

Abstract

We investigate the spin species relevant for the spin-dependent recombination used for the electrical readout of coherent spin manipulation in phosphorus-doped silicon. Via a multifrequency pump-probe experiment in pulsed electrically detected magnetic resonance, we demonstrate that the dominant spin-dependent recombination transition occurs between phosphorus donors and Si/SiO_{2} interface states. Combining pulses at different microwave frequencies allows us to selectively address the two spin subsystems participating in the recombination process and to coherently manipulate and detect the relative spin orientation of the two recombination partners.

Entities:  

Year:  2010        PMID: 20366723     DOI: 10.1103/PhysRevLett.104.046402

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  2 in total

1.  Electrical current through individual pairs of phosphorus donor atoms and silicon dangling bonds.

Authors:  K Ambal; P Rahe; A Payne; J Slinkman; C C Williams; C Boehme
Journal:  Sci Rep       Date:  2016-01-13       Impact factor: 4.379

Review 2.  Spin-chemistry concepts for spintronics scientists.

Authors:  Konstantin L Ivanov; Alexander Wagenpfahl; Carsten Deibel; Jörg Matysik
Journal:  Beilstein J Nanotechnol       Date:  2017-07-11       Impact factor: 3.649

  2 in total

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