Literature DB >> 20339063

An emergent change of phase for electronics.

Hidenori Takagi1, Harold Y Hwang.   

Abstract

Correlated electrons in transition metal oxides can form a variety of electronic phases. The phase change between these various states gives rise to novel device functions, including sensing, signal conversion, and nonvolatile memory, and is now at the frontier of research on "emergent research device materials." Those oxide devices may have an advantage over conventional semiconductor devices for added functionality and future downsizing to the nanoscale. The elucidation of the microscopic physics behind their operation is a key step for further development.

Entities:  

Year:  2010        PMID: 20339063     DOI: 10.1126/science.1182541

Source DB:  PubMed          Journal:  Science        ISSN: 0036-8075            Impact factor:   47.728


  23 in total

1.  Interface-induced multiferroism by design in complex oxide superlattices.

Authors:  Hangwen Guo; Zhen Wang; Shuai Dong; Saurabh Ghosh; Mohammad Saghayezhian; Lina Chen; Yakui Weng; Andreas Herklotz; Thomas Z Ward; Rongying Jin; Sokrates T Pantelides; Yimei Zhu; Jiandi Zhang; E W Plummer
Journal:  Proc Natl Acad Sci U S A       Date:  2017-06-12       Impact factor: 11.205

2.  A heteroepitaxial perovskite metal-base transistor.

Authors:  Takeaki Yajima; Yasuyuki Hikita; Harold Y Hwang
Journal:  Nat Mater       Date:  2011-01-23       Impact factor: 43.841

3.  Creation and control of a two-dimensional electron liquid at the bare SrTiO3 surface.

Authors:  W Meevasana; P D C King; R H He; S-K Mo; M Hashimoto; A Tamai; P Songsiriritthigul; F Baumberger; Z-X Shen
Journal:  Nat Mater       Date:  2011-01-16       Impact factor: 43.841

4.  Wide bandgap tunability in complex transition metal oxides by site-specific substitution.

Authors:  Woo Seok Choi; Matthew F Chisholm; David J Singh; Taekjib Choi; Gerald E Jellison; Ho Nyung Lee
Journal:  Nat Commun       Date:  2012-02-21       Impact factor: 14.919

5.  Atomic-scale control of competing electronic phases in ultrathin LaNiO₃.

Authors:  P D C King; H I Wei; Y F Nie; M Uchida; C Adamo; S Zhu; X He; I Božović; D G Schlom; K M Shen
Journal:  Nat Nanotechnol       Date:  2014-04-06       Impact factor: 39.213

6.  Field-Driven Mott Gap Collapse and Resistive Switch in Correlated Insulators.

Authors:  G Mazza; A Amaricci; M Capone; M Fabrizio
Journal:  Phys Rev Lett       Date:  2016-10-20       Impact factor: 9.161

7.  Switchable scattering meta-surfaces for broadband terahertz modulation.

Authors:  M Unlu; M R Hashemi; C W Berry; S Li; S-H Yang; M Jarrahi
Journal:  Sci Rep       Date:  2014-07-16       Impact factor: 4.379

8.  Magnetization states of all-oxide spin valves controlled by charge-orbital ordering of coupled ferromagnets.

Authors:  Han-Chun Wu; Oleg N Mryasov; Mohamed Abid; Kevin Radican; Igor V Shvets
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

9.  High performance of Mn-Co-Ni-O spinel nanofilms sputtered from acetate precursors.

Authors:  Zhiming Huang; Wei Zhou; Cheng Ouyang; Jing Wu; Fei Zhang; Jingguo Huang; Yanqing Gao; Junhao Chu
Journal:  Sci Rep       Date:  2015-06-08       Impact factor: 4.379

10.  Wafer-scale growth of VO2 thin films using a combinatorial approach.

Authors:  Hai-Tian Zhang; Lei Zhang; Debangshu Mukherjee; Yuan-Xia Zheng; Ryan C Haislmaier; Nasim Alem; Roman Engel-Herbert
Journal:  Nat Commun       Date:  2015-10-09       Impact factor: 14.919

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