| Literature DB >> 20161098 |
Neal E Hartsough1, Jan S Iwanczyk, Einar Nygard, Nail Malakhov, William C Barber, Thulasidharan Gandhi.
Abstract
We have created high-resolution x-ray imaging devices using polycrystalline mercuric iodide (HgI(2)) films grown directly onto CMOS readout chips using a thermal vapor transport process. Images from prototype 400x400 pixel HgI(2)-coated CMOS readout chips are presented, where the pixel grid is 30 mum x 30 mum. The devices exhibited sensitivity of 6.2 muC/Rcm(2) with corresponding dark current of approximately 2.7 nA/cm(2), and a 80 mum FWHM planar image response to a 50 mum slit aperture. X-ray CT images demonstrate a point spread function sufficient to obtain a 50 mum spatial resolution in reconstructed CT images at a substantially reduced dose compared to phosphor-coated readouts. The use of CMOS technology allows for small pixels (30 mum), fast readout speeds (8 fps for a 3200x3200 pixel array), and future design flexibility due to the use of well-developed fabrication processes.Entities:
Year: 2009 PMID: 20161098 PMCID: PMC2745163 DOI: 10.1109/TNS.2009.2023478
Source DB: PubMed Journal: IEEE Trans Nucl Sci ISSN: 0018-9499 Impact factor: 1.679