Literature DB >> 19706954

Abnormal bipolar-like resistance change behavior induced by symmetric electroforming in Pt/TiO2/Pt resistive switching cells.

Doo Seok Jeong1, Herbert Schroeder, Rainer Waser.   

Abstract

Abnormal bipolar-like resistive changes are reported in TiO(2) thin films sandwiched between Pt top and bottom electrodes. The abnormal behavior is shown relying on the applied voltage range. That is, normal bipolar switching is also shown in the same sample with the optimized voltage range. In the abnormal mode, both set- and reset-like changes in resistance take place under the same polarity of the applied voltage. This abnormal behavior is considered to be due to symmetric electroforming which is assumed to activate electrochemical reactions involving oxygen vacancies at both Pt/TiO(2) interfaces. We analyze the abnormal behavior in terms of the interfacial resistive switching taking place on both interfaces nearly simultaneously.

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Year:  2009        PMID: 19706954     DOI: 10.1088/0957-4484/20/37/375201

Source DB:  PubMed          Journal:  Nanotechnology        ISSN: 0957-4484            Impact factor:   3.874


  3 in total

1.  Reversible voltage dependent transition of abnormal and normal bipolar resistive switching.

Authors:  Guangyu Wang; Chen Li; Yan Chen; Yidong Xia; Di Wu; Qingyu Xu
Journal:  Sci Rep       Date:  2016-11-14       Impact factor: 4.379

2.  Reversible switching mode change in Ta2O5-based resistive switching memory (ReRAM).

Authors:  Taeyoon Kim; Heerak Son; Inho Kim; Jaewook Kim; Suyoun Lee; Jong Keuk Park; Joon Young Kwak; Jongkil Park; YeonJoo Jeong
Journal:  Sci Rep       Date:  2020-07-09       Impact factor: 4.379

3.  Transition between bipolar and abnormal bipolar resistive switching in amorphous oxides with a mobility edge.

Authors:  Christiane Ader; Andreas Falkenstein; Manfred Martin
Journal:  Sci Rep       Date:  2021-07-13       Impact factor: 4.379

  3 in total

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