Literature DB >> 19645474

Interface engineering: an effective approach toward high-performance organic field-effect transistors.

Chong-an Di1, Yunqi Liu, Gui Yu, Daoben Zhu.   

Abstract

By virtue of their excellent solution processibility and flexibility, organic field-effect transistors (OFETs) are considered outstanding candidates for application in low-cost, flexible electronics. Not only does the performance of OFETs depend on the molecular properties of the organic semiconductors involved, but it is also dramatically affected by the nature of the interfaces present. Therefore, interface engineering, a novel approach towards high-performance OFETs, has attracted considerable attention. In this Account, we focus on recent advances in the study of OFET interfaces--including electrode/organic layer interfaces, dielectric/organic layer interfaces, and organic/organic layer interfaces--that have resulted in improved device performance, enhanced stability, and the realization of organic light-emitting transistors. The electrode/organic layer interface, one of the most important interfaces in OFETs, usually determines the carrier injection characteristics. Focusing on OFETs with copper and silver electrodes, we describe effective modification approaches of the electrode/organic layer interfaces. Furthermore, the influence of electrode morphology on device performance is demonstrated. These results provide novel approaches towards high-performance, low-cost OFETs. The dielectric/organic layer interface is a vital interface that dominates carrier transport; modification of this interface therefore offers a general way to improve carrier transport accordingly. The dielectric layer also affects the device stability of OFETs. For example, high-performance pentacene OFETs with excellent stability are obtained by the selection of a dielectric layer with an appropriate surface energy. The organic/organic layer interface is a newly investigated topic in OFETs. Introduction of organic/organic layer interfaces, such as heterojunctions, can improve device performance and afford ambipolar OFETs. By designing laterally arranged heterojunctions made of organic field-effect materials and light-emitting materials, we realized both light emission and field effects simultaneously in a single OFET. The preceding decade has seen great progress in OFETs. Interface engineering provides a simple but effective approach toward creating high-performance OFETs and will continue to make essential contributions in the development of useful OFET-based devices. The exploration of novel interface engineering applications also merits further attention; the design of gas sensors through a more complete understanding of interface phenomena serves as just one example.

Entities:  

Year:  2009        PMID: 19645474     DOI: 10.1021/ar9000873

Source DB:  PubMed          Journal:  Acc Chem Res        ISSN: 0001-4842            Impact factor:   22.384


  15 in total

Review 1.  Atomic Layer Deposition of Metal Oxides and Chalcogenides for High Performance Transistors.

Authors:  Chengxu Shen; Zhigang Yin; Fionn Collins; Nicola Pinna
Journal:  Adv Sci (Weinh)       Date:  2022-06-16       Impact factor: 17.521

2.  Effects of self-assembled monolayer structural order, surface homogeneity and surface energy on pentacene morphology and thin film transistor device performance.

Authors:  Daniel Orrin Hutchins; Tobias Weidner; Joe Baio; Brent Polishak; Orb Acton; Nathan Cernetic; Hong Ma; Alex K-Y Jen
Journal:  J Mater Chem C Mater       Date:  2013-01-04       Impact factor: 7.393

3.  Epitaxy of highly ordered organic semiconductor crystallite networks supported by hexagonal boron nitride.

Authors:  Aleksandar Matković; Jakob Genser; Daniel Lüftner; Markus Kratzer; Radoš Gajić; Peter Puschnig; Christian Teichert
Journal:  Sci Rep       Date:  2016-12-08       Impact factor: 4.379

4.  A Comparative Computational Study of the Adsorption of TCNQ and F4-TCNQ on the Coinage Metal Surfaces.

Authors:  Roberto Otero; Rodolfo Miranda; José M Gallego
Journal:  ACS Omega       Date:  2019-10-04

5.  A stable solution-processed polymer semiconductor with record high-mobility for printed transistors.

Authors:  Jun Li; Yan Zhao; Huei Shuan Tan; Yunlong Guo; Chong-An Di; Gui Yu; Yunqi Liu; Ming Lin; Suo Hon Lim; Yuhua Zhou; Haibin Su; Beng S Ong
Journal:  Sci Rep       Date:  2012-10-18       Impact factor: 4.379

6.  Evaluation of intrinsic charge carrier transport at insulator-semiconductor interfaces probed by a non-contact microwave-based technique.

Authors:  Yoshihito Honsho; Tomoyo Miyakai; Tsuneaki Sakurai; Akinori Saeki; Shu Seki
Journal:  Sci Rep       Date:  2013-11-11       Impact factor: 4.379

7.  High mobility polymer based on a π-extended benzodithiophene and its application for fast switching transistor and high gain photoconductor.

Authors:  Sungmin Park; Byung Tack Lim; BongSoo Kim; Hae Jung Son; Dae Sung Chung
Journal:  Sci Rep       Date:  2014-06-27       Impact factor: 4.379

8.  Integrated circuits based on conjugated polymer monolayer.

Authors:  Mengmeng Li; Deepthi Kamath Mangalore; Jingbo Zhao; Joshua H Carpenter; Hongping Yan; Harald Ade; He Yan; Klaus Müllen; Paul W M Blom; Wojciech Pisula; Dago M de Leeuw; Kamal Asadi
Journal:  Nat Commun       Date:  2018-01-31       Impact factor: 14.919

9.  Solution-Processed Bilayer Dielectrics for Flexible Low-Voltage Organic Field-Effect Transistors in Pressure-Sensing Applications.

Authors:  Zhigang Yin; Ming-Jie Yin; Ziyang Liu; Yangxi Zhang; A Ping Zhang; Qingdong Zheng
Journal:  Adv Sci (Weinh)       Date:  2018-07-11       Impact factor: 16.806

10.  Re-evaluating how charge transfer modifies the conformation of adsorbed molecules.

Authors:  P J Blowey; S Velari; L A Rochford; D A Duncan; D A Warr; T-L Lee; A De Vita; G Costantini; D P Woodruff
Journal:  Nanoscale       Date:  2018-08-09       Impact factor: 7.790

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