| Literature DB >> 19529788 |
B P Zhu, Q F Zhou, J Shi, K K Shung, S Irisawa, S Takeuchi.
Abstract
Using a simple rapid heating process, Pb(Zr(0.52)Ti(0.48))O(3) (PZT) thick films prepared by hydrothermal method were separated from a Ti substrate. Scanning electron microscopy (SEM) revealed that the self-separated films were crack-free. After solution infiltration and high temperature annealing, the PZT thick films were shown to possess good electric properties. At 1 kHz, the dielectric constant and the loss were 593 and 0.05, respectively. The remnant polarization was 30.0 muCcm(2) at room temperature. A high frequency single element ultrasound transducer fabricated with these films showed a bandwidth at -6 dB of 73% at a center frequency of 67 MHz.Entities:
Year: 2009 PMID: 19529788 PMCID: PMC2682757 DOI: 10.1063/1.3095504
Source DB: PubMed Journal: Appl Phys Lett ISSN: 0003-6951 Impact factor: 3.791