Large-scale fabrication of 4-nm-channel vertical protein-based ambipolar transistors.

We suggest a universal method for the mass production of nanometer-sized molecular transistors. This vertical-type device was fabricated using conventional photolithography and self-assembly methods and was processed in parallel fashion. We used this transistor to investigate the transport properties of a single layer of bovine serum albumin protein. This 4-nm-channel device exhibits low operating voltages, ambipolar behavior, and high gate sensitivity. The operation mechanism of this new device is suggested, and the charge transfer through the protein layer was explored.