Literature DB >> 19226128

Spin states of the first four holes in a silicon nanowire quantum dot.

Floris A Zwanenburg1, Cathalijn E W M van Rijmenam, Ying Fang, Charles M Lieber, Leo P Kouwenhoven.   

Abstract

We report measurements on a silicon nanowire quantum dot with a clarity that allows for a complete understanding of the spin states of the first four holes. First, we show control of the hole number down to one. Detailed measurements at perpendicular magnetic fields reveal the Zeeman splitting of a single hole in silicon. We are able to determine the ground-state spin configuration for one to four holes occupying the quantum dot and find a spin filling with alternating spin-down and spin-up holes, which is confirmed by magnetospectroscopy up to 9 T. Additionally, a so far inexplicable feature in single-charge quantum dots in many materials systems is analyzed in detail. We observe excitations of the empty quantum dot, which cannot correspond to electronic or Zeeman states. We show that the most likely explanation is acoustic phonon emission to a cavity between the two contacts to the nanowire.

Entities:  

Year:  2009        PMID: 19226128     DOI: 10.1021/nl803440s

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  12 in total

1.  Hole spin relaxation in Ge-Si core-shell nanowire qubits.

Authors:  Yongjie Hu; Ferdinand Kuemmeth; Charles M Lieber; Charles M Marcus
Journal:  Nat Nanotechnol       Date:  2011-12-18       Impact factor: 39.213

2.  Embracing the quantum limit in silicon computing.

Authors:  John J L Morton; Dane R McCamey; Mark A Eriksson; Stephen A Lyon
Journal:  Nature       Date:  2011-11-16       Impact factor: 49.962

3.  Spectroscopy of few-electron single-crystal silicon quantum dots.

Authors:  Martin Fuechsle; S Mahapatra; F A Zwanenburg; Mark Friesen; M A Eriksson; Michelle Y Simmons
Journal:  Nat Nanotechnol       Date:  2010-05-23       Impact factor: 39.213

4.  Coherent electron-phonon coupling in tailored quantum systems.

Authors:  P Roulleau; S Baer; T Choi; F Molitor; J Güttinger; T Müller; S Dröscher; K Ensslin; T Ihn
Journal:  Nat Commun       Date:  2011       Impact factor: 14.919

5.  Diameter-dependent dopant location in silicon and germanium nanowires.

Authors:  Ping Xie; Yongjie Hu; Ying Fang; Jinlin Huang; Charles M Lieber
Journal:  Proc Natl Acad Sci U S A       Date:  2009-08-24       Impact factor: 11.205

6.  Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements.

Authors:  Craig M Polley; Warrick R Clarke; Michelle Y Simmons
Journal:  Nanoscale Res Lett       Date:  2011-10-03       Impact factor: 4.703

7.  Passivation and characterization of charge defects in ambipolar silicon quantum dots.

Authors:  Paul C Spruijtenburg; Sergey V Amitonov; Filipp Mueller; Wilfred G van der Wiel; Floris A Zwanenburg
Journal:  Sci Rep       Date:  2016-12-06       Impact factor: 4.379

8.  A CMOS silicon spin qubit.

Authors:  R Maurand; X Jehl; D Kotekar-Patil; A Corna; H Bohuslavskyi; R Laviéville; L Hutin; S Barraud; M Vinet; M Sanquer; S De Franceschi
Journal:  Nat Commun       Date:  2016-11-24       Impact factor: 14.919

9.  Room temperature magneto-optic effect in silicon light-emitting diodes.

Authors:  F Chiodi; S L Bayliss; L Barast; D Débarre; H Bouchiat; R H Friend; A D Chepelianskii
Journal:  Nat Commun       Date:  2018-01-26       Impact factor: 14.919

10.  Palladium gates for reproducible quantum dots in silicon.

Authors:  Matthias Brauns; Sergey V Amitonov; Paul-Christiaan Spruijtenburg; Floris A Zwanenburg
Journal:  Sci Rep       Date:  2018-04-09       Impact factor: 4.379

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