Literature DB >> 22094695

Embracing the quantum limit in silicon computing.

John J L Morton1, Dane R McCamey, Mark A Eriksson, Stephen A Lyon.   

Abstract

Quantum computers hold the promise of massive performance enhancements across a range of applications, from cryptography and databases to revolutionary scientific simulation tools. Such computers would make use of the same quantum mechanical phenomena that pose limitations on the continued shrinking of conventional information processing devices. Many of the key requirements for quantum computing differ markedly from those of conventional computers. However, silicon, which plays a central part in conventional information processing, has many properties that make it a superb platform around which to build a quantum computer.
© 2011 Macmillan Publishers Limited. All rights reserved

Entities:  

Year:  2011        PMID: 22094695     DOI: 10.1038/nature10681

Source DB:  PubMed          Journal:  Nature        ISSN: 0028-0836            Impact factor:   49.962


  44 in total

1.  Coherent manipulation of electronic States in a double quantum dot.

Authors:  T Hayashi; T Fujisawa; H D Cheong; Y H Jeong; Y Hirayama
Journal:  Phys Rev Lett       Date:  2003-11-26       Impact factor: 9.161

2.  Transport spectroscopy of a single dopant in a gated silicon nanowire.

Authors:  H Sellier; G P Lansbergen; J Caro; S Rogge; N Collaert; I Ferain; M Jurczak; S Biesemans
Journal:  Phys Rev Lett       Date:  2006-11-16       Impact factor: 9.161

3.  Electrically detected electron spin resonance in a high-mobility silicon quantum well.

Authors:  Junya Matsunami; Mitsuaki Ooya; Tohru Okamoto
Journal:  Phys Rev Lett       Date:  2006-08-08       Impact factor: 9.161

Review 4.  Gate-defined quantum dots in intrinsic silicon.

Authors:  Susan J Angus; Andrew J Ferguson; Andrew S Dzurak; Robert G Clark
Journal:  Nano Lett       Date:  2007-06-14       Impact factor: 11.189

5.  Storage of multiple coherent microwave excitations in an electron spin ensemble.

Authors:  Hua Wu; Richard E George; Janus H Wesenberg; Klaus Mølmer; David I Schuster; Robert J Schoelkopf; Kohei M Itoh; Arzhang Ardavan; John J L Morton; G Andrew D Briggs
Journal:  Phys Rev Lett       Date:  2010-09-27       Impact factor: 9.161

6.  Electron spin coherence and electron nuclear double resonance of Bi donors in natural Si.

Authors:  Richard E George; Wayne Witzel; H Riemann; N V Abrosimov; N Nötzel; Mike L W Thewalt; John J L Morton
Journal:  Phys Rev Lett       Date:  2010-08-06       Impact factor: 9.161

7.  Electronic spin storage in an electrically readable nuclear spin memory with a lifetime >100 seconds.

Authors:  D R McCamey; J Van Tol; G W Morley; C Boehme
Journal:  Science       Date:  2010-12-17       Impact factor: 47.728

8.  The initialization and manipulation of quantum information stored in silicon by bismuth dopants.

Authors:  Gavin W Morley; Marc Warner; A Marshall Stoneham; P Thornton Greenland; Johan van Tol; Christopher W M Kay; Gabriel Aeppli
Journal:  Nat Mater       Date:  2010-08-15       Impact factor: 43.841

9.  Silica-on-silicon waveguide quantum circuits.

Authors:  Alberto Politi; Martin J Cryan; John G Rarity; Siyuan Yu; Jeremy L O'Brien
Journal:  Science       Date:  2008-03-27       Impact factor: 47.728

10.  Long-lived spin coherence in silicon with an electrical spin trap readout.

Authors:  G W Morley; D R McCamey; H A Seipel; L-C Brunel; J van Tol; C Boehme
Journal:  Phys Rev Lett       Date:  2008-11-14       Impact factor: 9.161

View more
  32 in total

1.  A single-atom transistor.

Authors:  Martin Fuechsle; Jill A Miwa; Suddhasatta Mahapatra; Hoon Ryu; Sunhee Lee; Oliver Warschkow; Lloyd C L Hollenberg; Gerhard Klimeck; Michelle Y Simmons
Journal:  Nat Nanotechnol       Date:  2012-02-19       Impact factor: 39.213

2.  Transistors arrive at the atomic limit.

Authors:  Gabriel P Lansbergen
Journal:  Nat Nanotechnol       Date:  2012-02-19       Impact factor: 39.213

3.  Gate fidelity and coherence of an electron spin in an Si/SiGe quantum dot with micromagnet.

Authors:  Erika Kawakami; Thibaut Jullien; Pasquale Scarlino; Daniel R Ward; Donald E Savage; Max G Lagally; Viatcheslav V Dobrovitski; Mark Friesen; Susan N Coppersmith; Mark A Eriksson; Lieven M K Vandersypen
Journal:  Proc Natl Acad Sci U S A       Date:  2016-10-03       Impact factor: 11.205

4.  Optical addressing of an individual erbium ion in silicon.

Authors:  Chunming Yin; Milos Rancic; Gabriele G de Boo; Nikolas Stavrias; Jeffrey C McCallum; Matthew J Sellars; Sven Rogge
Journal:  Nature       Date:  2013-05-02       Impact factor: 49.962

5.  Two-axis control of a singlet-triplet qubit with an integrated micromagnet.

Authors:  Xian Wu; D R Ward; J R Prance; Dohun Kim; John King Gamble; R T Mohr; Zhan Shi; D E Savage; M G Lagally; Mark Friesen; S N Coppersmith; M A Eriksson
Journal:  Proc Natl Acad Sci U S A       Date:  2014-08-04       Impact factor: 11.205

6.  Spatially resolving valley quantum interference of a donor in silicon.

Authors:  J Salfi; J A Mol; R Rahman; G Klimeck; M Y Simmons; L C L Hollenberg; S Rogge
Journal:  Nat Mater       Date:  2014-04-06       Impact factor: 43.841

7.  Quantification of the plasma clearance kinetics of a gadolinium-based contrast agent by photoinduced triplet harvesting.

Authors:  Stewart Russell; Ryan Casey; Dung M Hoang; Benjamin W Little; Peter D Olmsted; David S Rumschitzki; Youssef Zaim Wadghiri; Edward A Fisher
Journal:  Anal Chem       Date:  2012-09-18       Impact factor: 6.986

8.  A single-atom electron spin qubit in silicon.

Authors:  Jarryd J Pla; Kuan Y Tan; Juan P Dehollain; Wee H Lim; John J L Morton; David N Jamieson; Andrew S Dzurak; Andrea Morello
Journal:  Nature       Date:  2012-09-19       Impact factor: 49.962

9.  Quantum control of hybrid nuclear-electronic qubits.

Authors:  Gavin W Morley; Petra Lueders; M Hamed Mohammady; Setrak J Balian; Gabriel Aeppli; Christopher W M Kay; Wayne M Witzel; Gunnar Jeschke; Tania S Monteiro
Journal:  Nat Mater       Date:  2012-12-02       Impact factor: 43.841

10.  Hole spins in an InAs/GaAs quantum dot molecule subject to lateral electric fields.

Authors:  Xiangyu Ma; Garnett W Bryant; Matthew F Doty
Journal:  Phys Rev B       Date:  2016       Impact factor: 4.036

View more

北京卡尤迪生物科技股份有限公司 © 2022-2023.