Literature DB >> 19113292

STM images of subsurface Mn atoms in GaAs: evidence of hybridization of surface and impurity states.

J-M Jancu1, J-Ch Girard, M O Nestoklon, A Lemaître, F Glas, Z Z Wang, P Voisin.   

Abstract

We show that scanning tunneling microscopy (STM) images of subsurface Mn atoms in GaAs are formed by hybridization of the impurity state with intrinsic surface states. They cannot be interpreted in terms of bulk-impurity wave-function imaging. Atomic-resolution images obtained using a low-temperature apparatus are compared with advanced, parameter-free tight-binding simulations accounting for both the buckled (110) surface and vacuum electronic properties. Splitting of the acceptor state due to buckling is shown to play a prominent role.

Year:  2008        PMID: 19113292     DOI: 10.1103/PhysRevLett.101.196801

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  2 in total

1.  Single dopants in semiconductors.

Authors:  Paul M Koenraad; Michael E Flatté
Journal:  Nat Mater       Date:  2011-02       Impact factor: 43.841

2.  Atomistic simulations of the optical absorption of type-II CdSe/ZnTe superlattices.

Authors:  Soline Boyer-Richard; Cédric Robert; Lionel Gérard; Jan-Peter Richters; Régis André; Joël Bleuse; Henri Mariette; Jacky Even; Jean-Marc Jancu
Journal:  Nanoscale Res Lett       Date:  2012-10-02       Impact factor: 4.703

  2 in total

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