| Literature DB >> 19072060 |
Bin Hua1, Junichi Motohisa, Yasunori Kobayashi, Shinjiroh Hara, Takashi Fukui.
Abstract
Highly uniform GaAs/GaAsP coaxial nanowires were prepared via selective-area metal organic vapor phase epitaxy. Photoluminescence spectra from a single nanowire indicate that the obtained heterostructures can produce near-infrared (NIR) lasing under pulsed light excitation. The end facets of a single nanowire form a natural mirror surface to create an axial cavity, which realizes resonance and give stimulated emission. This study is a considerable advance toward the realization of nanowire-based NIR light sources.Entities:
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Year: 2009 PMID： 19072060 DOI： 10.1021/nl802636b
Source DB: PubMed Journal: Nano Lett ISSN： 1530-6984 Impact factor: 11.189