Literature DB >> 18783279

Control of InAs nanowire growth directions on Si.

Katsuhiro Tomioka1, Junichi Motohisa, Shinjiroh Hara, Takashi Fukui.   

Abstract

We report on control of growth directions of InAs nanowires on Si substrate. We achieved to integrate vertical InAs nanowires on Si by modifying initial Si(111) surface in selective-area metal-organic vapor phase epitaxy with flow-rate modulation mode at low temperature. Cross-sectional transmission electron microscope and Raman scattering showed that misfit dislocation with local strains were accommodated in the interface.

Entities:  

Year:  2008        PMID： 18783279     DOI： 10.1021/nl802398j

Source DB:  PubMed          Journal:  Nano Lett        ISSN： 1530-6984            Impact factor:   11.189


  14 in total

1.  Tunnel field-effect transistors as energy-efficient electronic switches.

Authors:  Adrian M Ionescu; Heike Riel
Journal:  Nature       Date:  2011-11-16       Impact factor: 49.962

2.  A III-V nanowire channel on silicon for high-performance vertical transistors.

Authors:  Katsuhiro Tomioka; Masatoshi Yoshimura; Takashi Fukui
Journal:  Nature       Date:  2012-08-09       Impact factor: 49.962

3.  Growth mechanism of self-catalyzed group III-V nanowires.

Authors:  Bernhard Mandl; Julian Stangl; Emelie Hilner; Alexei A Zakharov; Karla Hillerich; Anil W Dey; Lars Samuelson; Günther Bauer; Knut Deppert; Anders Mikkelsen
Journal:  Nano Lett       Date:  2010-11-10       Impact factor: 11.189

4.  Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study.

Authors:  Bernhard Mandl; Anil W Dey; Julian Stangl; Mirco Cantoro; Lars-Erik Wernersson; Günther Bauer; Lars Samuelson; Knut Deppert; Claes Thelander
Journal:  J Cryst Growth       Date:  2011-11-01       Impact factor: 1.797

5.  Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates.

Authors:  Tianfeng Li; Yonghai Chen; Wen Lei; Xiaolong Zhou; Shuai Luo; Yongzheng Hu; Lijun Wang; Tao Yang; Zhanguo Wang
Journal:  Nanoscale Res Lett       Date:  2011-07-21       Impact factor: 4.703

6.  Influence of the oxide layer for growth of self-assisted InAs nanowires on Si(111).

Authors:  Morten Hannibal Madsen; Martin Aagesen; Peter Krogstrup; Claus Sørensen; Jesper Nygård
Journal:  Nanoscale Res Lett       Date:  2011-08-31       Impact factor: 4.703

7.  InAs-mediated growth of vertical InSb nanowires on Si substrates.

Authors:  Tianfeng Li; Lizhen Gao; Wen Lei; Lijun Guo; Huayong Pan; Tao Yang; Yonghai Chen; Zhanguo Wang
Journal:  Nanoscale Res Lett       Date:  2013-07-24       Impact factor: 4.703

8.  Sn-Seeded GaAs Nanowires as Self-Assembled Radial p-n Junctions.

Authors:  Rong Sun; Daniel Jacobsson; I-Ju Chen; Malin Nilsson; Claes Thelander; Sebastian Lehmann; Kimberly A Dick
Journal:  Nano Lett       Date:  2015-06-01       Impact factor: 11.189

9.  Structural investigation of GaInP nanowires using X-ray diffraction.

Authors:  D Kriegner; J M Persson; T Etzelstorfer; D Jacobsson; J Wallentin; J B Wagner; K Deppert; M T Borgström; J Stangl
Journal:  Thin Solid Films       Date:  2013-09-30       Impact factor: 2.183

10.  Gold-free ternary III-V antimonide nanowire arrays on silicon: twin-free down to the first bilayer.

Authors:  Sònia Conesa-Boj; Dominik Kriegner; Xiang-Lei Han; Sébastien Plissard; Xavier Wallart; Julian Stangl; Anna Fontcuberta i Morral; Philippe Caroff
Journal:  Nano Lett       Date:  2013-12-18       Impact factor: 11.189
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