Literature DB >> 18654386

A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor.

Yongjie Hu1, Hugh O H Churchill, David J Reilly, Jie Xiang, Charles M Lieber, Charles M Marcus.   

Abstract

One proposal for a solid-state-based quantum bit (qubit) is to control coupled electron spins on adjacent semiconductor quantum dots. Most experiments have focused on quantum dots made from III-V semiconductors; however, the coherence of electron spins in these materials is limited by hyperfine interactions with nuclear spins. Ge/Si core/shell nanowires seem ideally suited to overcome this limitation, because the most abundant nuclei in Ge and Si have spin zero and the nanowires can be chemically synthesized defect-free with tunable properties. Here, we present a double quantum dot based on Ge/Si nanowires in which we can completely control the coupling between the dots and to the leads. We also demonstrate that charge on the double dot can be detected by coupling it capacitively to an adjacent nanowire quantum dot. The double quantum dot and integrated charge sensor serve as an essential building block to form a solid-state qubit free of nuclear spin.

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Year:  2007        PMID: 18654386     DOI: 10.1038/nnano.2007.302

Source DB:  PubMed          Journal:  Nat Nanotechnol        ISSN: 1748-3387            Impact factor:   39.213


  16 in total

1.  Hole spin relaxation in Ge-Si core-shell nanowire qubits.

Authors:  Yongjie Hu; Ferdinand Kuemmeth; Charles M Lieber; Charles M Marcus
Journal:  Nat Nanotechnol       Date:  2011-12-18       Impact factor: 39.213

2.  Embracing the quantum limit in silicon computing.

Authors:  John J L Morton; Dane R McCamey; Mark A Eriksson; Stephen A Lyon
Journal:  Nature       Date:  2011-11-16       Impact factor: 49.962

3.  Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon.

Authors:  G Katsaros; P Spathis; M Stoffel; F Fournel; M Mongillo; V Bouchiat; F Lefloch; A Rastelli; O G Schmidt; S De Franceschi
Journal:  Nat Nanotechnol       Date:  2010-05-02       Impact factor: 39.213

4.  Radial modulation doping in core-shell nanowires.

Authors:  David C Dillen; Kyounghwan Kim; En-Shao Liu; Emanuel Tutuc
Journal:  Nat Nanotechnol       Date:  2014-01-19       Impact factor: 39.213

5.  Semiconductor nanowires: A platform for nanoscience and nanotechnology.

Authors:  Charles M Lieber
Journal:  MRS Bull       Date:  2011-12-01       Impact factor: 6.578

6.  Spin filtering with Mn-doped Ge-core/Si-shell nanowires.

Authors:  Sandip Aryal; Ranjit Pati
Journal:  Nanoscale Adv       Date:  2020-02-28

Review 7.  Synthetic nanoelectronic probes for biological cells and tissues.

Authors:  Bozhi Tian; Charles M Lieber
Journal:  Annu Rev Anal Chem (Palo Alto Calif)       Date:  2013-02-28       Impact factor: 10.745

8.  Misfit-guided self-organization of anticorrelated Ge quantum dot arrays on Si nanowires.

Authors:  Soonshin Kwon; Zack C Y Chen; Ji-Hun Kim; Jie Xiang
Journal:  Nano Lett       Date:  2012-08-16       Impact factor: 11.189

9.  Polycrystalline nanowires of gadolinium-doped ceria via random alignment mediated by supercritical carbon dioxide.

Authors:  Sang Woo Kim; Jae-Pyoung Ahn
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

10.  Heavy-Hole States in Germanium Hut Wires.

Authors:  Hannes Watzinger; Christoph Kloeffel; Lada Vukušić; Marta D Rossell; Violetta Sessi; Josip Kukučka; Raimund Kirchschlager; Elisabeth Lausecker; Alisha Truhlar; Martin Glaser; Armando Rastelli; Andreas Fuhrer; Daniel Loss; Georgios Katsaros
Journal:  Nano Lett       Date:  2016-10-17       Impact factor: 11.189

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