Efficient modification of Cu electrode with nanometer-sized copper tetracyanoquinodimethane for high performance organic field-effect transistors.

We report high performance organic field-effect transistors (OFETs) with the modified Cu bottom-contact electrodes. Efficient modification of the Cu electrodes with nanometer-size copper tetracyanoquinodimethane (Cu-TCNQ) increases the electrode/organic layer contact area and reduces contact resistance. We investigated the effect of the Cu-TCNQ morphology on the device performance. The pentacene-based OFETs with the modified Cu bottom-contact electrodes exhibited high device performance. The field-effect mobility up to 0.31 cm(2)/V s was achieved. To the best of our knowledge, this is the highest device performance for the OFETs with the bottom Cu electrodes ever reported. Consequently, our results provide an effective approach to fabricate high performance and low-cost OFETs.