| Literature DB >> 18352415 |
M Salluzzo1, G Ghiringhelli, J C Cezar, N B Brookes, G M De Luca, F Fracassi, R Vaglio.
Abstract
The mechanism of field-effect doping in the 123 high critical temperature superconductors (HTS) has been investigated by x-ray absorption spectroscopy in the presence of an electric field. We demonstrate that holes are created at the CuO chains of the charge reservoir and that field-effect doping of the CuO(2) planes occurs by charge transfer, from the chains to the planes, of a fraction of the overall induced holes. The electronic properties of the charge reservoir and of the dielectric-HTS interface determine the electric field doping of the CuO(2) planes.Entities:
Year: 2008 PMID: 18352415 DOI: 10.1103/PhysRevLett.100.056810
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161