Literature DB >> 18077335

Intrinsic single-domain switching in ferroelectric materials on a nearly ideal surface.

S V Kalinin1, B J Rodriguez, S Jesse, Y H Chu, T Zhao, R Ramesh, S Choudhury, L Q Chen, E A Eliseev, A N Morozovska.   

Abstract

Ferroelectric domain nucleation and growth in multiferroic BiFeO(3) is studied on a single-domain level by using piezoresponse force spectroscopy. Variation of local electromechanical response with dc tip bias is used to determine the size of the domain formed below the conductive scanning probe tip. The domain parameters are calculated self-consistently from the decoupled Green function theory by using tip geometry determined from the domain wall profile. The critical parameters of the nucleating domain and the activation energy for nucleation are determined. The switching mechanism is modeled by using the phase-field method, and comparison with experimental results shows that the nucleation biases are within a factor of approximately 2 of the intrinsic thermodynamic limit. The role of atomic-scale defects and long-range elastic fields on nucleation bias lowering is discussed. These measurements open a pathway for quantitative studies of the role of a single defect on kinetics and thermodynamics of first order bias-induced phase transitions and electrochemical reactions.

Entities:  

Year:  2007        PMID: 18077335      PMCID: PMC2154409          DOI: 10.1073/pnas.0709316104

Source DB:  PubMed          Journal:  Proc Natl Acad Sci U S A        ISSN: 0027-8424            Impact factor:   11.205


  10 in total

1.  Domain wall creep in epitaxial ferroelectric Pb(Zr(0.2)Ti(0.08)O(3) thin films.

Authors:  T Tybell; P Paruch; T Giamarchi; J-M Triscone
Journal:  Phys Rev Lett       Date:  2002-08-09       Impact factor: 9.161

2.  Epitaxial BiFeO3 multiferroic thin film heterostructures.

Authors:  J Wang; J B Neaton; H Zheng; V Nagarajan; S B Ogale; B Liu; D Viehland; V Vaithyanathan; D G Schlom; U V Waghmare; N A Spaldin; K M Rabe; M Wuttig; R Ramesh
Journal:  Science       Date:  2003-03-14       Impact factor: 47.728

3.  Electric polarization reversal and memory in a multiferroic material induced by magnetic fields.

Authors:  N Hur; S Park; P A Sharma; J S Ahn; S Guha; S-W Cheong
Journal:  Nature       Date:  2004-05-27       Impact factor: 49.962

4.  Magnetic phase control by an electric field.

Authors:  Thomas Lottermoser; Thomas Lonkai; Uwe Amann; Dietmar Hohlwein; Jörg Ihringer; Manfred Fiebig
Journal:  Nature       Date:  2004-07-29       Impact factor: 49.962

5.  Magnetoelectrics: A new route to magnetic ferroelectrics.

Authors:  Claude Ederer; Nicola A Spaldin
Journal:  Nat Mater       Date:  2004-12       Impact factor: 43.841

6.  Unusual phase transitions in ferroelectric nanodisks and nanorods.

Authors:  Ivan I Naumov; L Bellaiche; Huaxiang Fu
Journal:  Nature       Date:  2004-12-09       Impact factor: 49.962

7.  Domain wall roughness in epitaxial ferroelectric PbZr0.2Ti0.8O3 thin films.

Authors:  P Paruch; T Giamarchi; J-M Triscone
Journal:  Phys Rev Lett       Date:  2005-05-16       Impact factor: 9.161

8.  Multiferroic and magnetoelectric materials.

Authors:  W Eerenstein; N D Mathur; J F Scott
Journal:  Nature       Date:  2006-08-17       Impact factor: 49.962

9.  Tunnel junctions with multiferroic barriers.

Authors:  Martin Gajek; Manuel Bibes; Stéphane Fusil; Karim Bouzehouane; Josep Fontcuberta; Agnès Barthélémy; Albert Fert
Journal:  Nat Mater       Date:  2007-03-11       Impact factor: 43.841

10.  Polarization switching dynamics governed by the thermodynamic nucleation process in ultrathin ferroelectric films.

Authors:  J Y Jo; D J Kim; Y S Kim; S-B Choe; T K Song; J-G Yoon; T W Noh
Journal:  Phys Rev Lett       Date:  2006-12-15       Impact factor: 9.161

  10 in total
  6 in total

1.  Deterministic control of ferroelastic switching in multiferroic materials.

Authors:  N Balke; S Choudhury; S Jesse; M Huijben; Y H Chu; A P Baddorf; L Q Chen; R Ramesh; S V Kalinin
Journal:  Nat Nanotechnol       Date:  2009-10-11       Impact factor: 39.213

2.  Ferroelastic switching for nanoscale non-volatile magnetoelectric devices.

Authors:  S H Baek; H W Jang; C M Folkman; Y L Li; B Winchester; J X Zhang; Q He; Y H Chu; C T Nelson; M S Rzchowski; X Q Pan; R Ramesh; L Q Chen; C B Eom
Journal:  Nat Mater       Date:  2010-02-28       Impact factor: 43.841

3.  Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications.

Authors:  Souvik Kundu; Deepam Maurya; Michael Clavel; Yuan Zhou; Nripendra N Halder; Mantu K Hudait; Pallab Banerji; Shashank Priya
Journal:  Sci Rep       Date:  2015-02-16       Impact factor: 4.379

4.  Correlative multimodal probing of ionically-mediated electromechanical phenomena in simple oxides.

Authors:  Yunseok Kim; Evgheni Strelcov; In Rok Hwang; Taekjib Choi; Bae Ho Park; Stephen Jesse; Sergei V Kalinin
Journal:  Sci Rep       Date:  2013-10-11       Impact factor: 4.379

5.  Rapid mapping of polarization switching through complete information acquisition.

Authors:  Suhas Somnath; Alex Belianinov; Sergei V Kalinin; Stephen Jesse
Journal:  Nat Commun       Date:  2016-12-02       Impact factor: 14.919

6.  Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection.

Authors:  Souvik Kundu; Michael Clavel; Pranab Biswas; Bo Chen; Hyun-Cheol Song; Prashant Kumar; Nripendra N Halder; Mantu K Hudait; Pallab Banerji; Mohan Sanghadasa; Shashank Priya
Journal:  Sci Rep       Date:  2015-07-23       Impact factor: 4.379

  6 in total

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