Literature DB >> 17930774

Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions.

J Moser1, A Matos-Abiague, D Schuh, W Wegscheider, J Fabian, D Weiss.   

Abstract

We report the observation of tunneling anisotropic magnetoresistance effect in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed twofold anisotropy of the resistance can be switched by reversing the bias voltage, suggesting that the effect originates from the interference of the spin-orbit coupling at the interfaces. Corresponding model calculations reproduce the experimental findings very well.

Entities:  

Year:  2007        PMID： 17930774     DOI： 10.1103/PhysRevLett.99.056601

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


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