Literature DB >> 21102507

A window on the future of spintronics.

Hideo Ohno1.   

Abstract

Year:  2010        PMID： 21102507     DOI： 10.1038/nmat2913

Source DB:  PubMed          Journal:  Nat Mater        ISSN： 1476-1122            Impact factor:   43.841


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  20 in total

1.  Electric-field control of ferromagnetism.

Authors:  H Ohno; D Chiba; F Matsukura; T Omiya; E Abe; T Dietl; Y Ohno; K Ohtani
Journal:  Nature       Date:  2000 Dec 21-28       Impact factor: 49.962

2.  Theory of current-driven domain wall motion: spin transfer versus momentum transfer.

Authors:  Gen Tatara; Hiroshi Kohno
Journal:  Phys Rev Lett       Date:  2004-02-26       Impact factor: 9.161

3.  Tunneling anisotropic magnetoresistance: a spin-valve-like tunnel magnetoresistance using a single magnetic layer.

Authors:  C Gould; C Rüster; T Jungwirth; E Girgis; G M Schott; R Giraud; K Brunner; G Schmidt; L W Molenkamp
Journal:  Phys Rev Lett       Date:  2004-09-09       Impact factor: 9.161

4.  Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions.

Authors:  Shinji Yuasa; Taro Nagahama; Akio Fukushima; Yoshishige Suzuki; Koji Ando
Journal:  Nat Mater       Date:  2004-10-31       Impact factor: 43.841

5.  Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers.

Authors:  Stuart S P Parkin; Christian Kaiser; Alex Panchula; Philip M Rice; Brian Hughes; Mahesh Samant; See-Hun Yang
Journal:  Nat Mater       Date:  2004-10-31       Impact factor: 43.841

6.  Universality classes for domain wall motion in the ferromagnetic semiconductor (Ga,Mn)As.

Authors:  M Yamanouchi; J Ieda; F Matsukura; S E Barnes; S Maekawa; H Ohno
Journal:  Science       Date:  2007-09-21       Impact factor: 47.728

7.  Quantum spin Hall effect in inverted type-II semiconductors.

Authors:  Chaoxing Liu; Taylor L Hughes; Xiao-Liang Qi; Kang Wang; Shou-Cheng Zhang
Journal:  Phys Rev Lett       Date:  2008-06-11       Impact factor: 9.161

8.  Magnetic domain-wall racetrack memory.

Authors:  Stuart S P Parkin; Masamitsu Hayashi; Luc Thomas
Journal:  Science       Date:  2008-04-11       Impact factor: 47.728

9.  Magnetic impurities on the surface of a topological insulator.

Authors:  Qin Liu; Chao-Xing Liu; Cenke Xu; Xiao-Liang Qi; Shou-Cheng Zhang
Journal:  Phys Rev Lett       Date:  2009-04-17       Impact factor: 9.161

10.  Large voltage-induced magnetic anisotropy change in a few atomic layers of iron.

Authors:  T Maruyama; Y Shiota; T Nozaki; K Ohta; N Toda; M Mizuguchi; A A Tulapurkar; T Shinjo; M Shiraishi; S Mizukami; Y Ando; Y Suzuki
Journal:  Nat Nanotechnol       Date:  2009-01-18       Impact factor: 39.213
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  13 in total

1.  Electric-field-assisted switching in magnetic tunnel junctions.

Authors:  Wei-Gang Wang; Mingen Li; Stephen Hageman; C L Chien
Journal:  Nat Mater       Date:  2011-11-13       Impact factor: 43.841

2.  More than just room temperature.

Authors: 
Journal:  Nat Mater       Date:  2010-12       Impact factor: 43.841

3.  Electric-field control of domain wall motion in perpendicularly magnetized materials.

Authors:  A J Schellekens; A van den Brink; J H Franken; H J M Swagten; B Koopmans
Journal:  Nat Commun       Date:  2012-05-22       Impact factor: 14.919

4.  Film size-dependent voltage-modulated magnetism in multiferroic heterostructures.

Authors:  J-M Hu; L Shu; Z Li; Y Gao; Y Shen; Y H Lin; L Q Chen; C W Nan
Journal:  Philos Trans A Math Phys Eng Sci       Date:  2014-01-13       Impact factor: 4.226

5.  Voltage control of magnetism in multiferroic heterostructures.

Authors:  Ming Liu; Nian X Sun
Journal:  Philos Trans A Math Phys Eng Sci       Date:  2014-01-13       Impact factor: 4.226

6.  High-density magnetoresistive random access memory operating at ultralow voltage at room temperature.

Authors:  Jia-Mian Hu; Zheng Li; Long-Qing Chen; Ce-Wen Nan
Journal:  Nat Commun       Date:  2011-11-22       Impact factor: 14.919

7.  Reversible switching of magnetic states by electric fields in nitrogenized-divacancies graphene decorated by tungsten atoms.

Authors:  Gui-Xian Ge; Hai-Bin Sun; Hai-Bing Sun; Yan Han; Feng-Qi Song; Ji-Jun Zhao; Guang-Hou Wang; Jian-Guo Wan
Journal:  Sci Rep       Date:  2014-12-19       Impact factor: 4.379

8.  Lattice dynamics of Ga1-xMnxN and Ga1-xMnxAs by first-principle calculations.

Authors:  Horacio W Leite Alves; Luísa Mr Scolfaro; Eronides F da Silva
Journal:  Nanoscale Res Lett       Date:  2012-10-17       Impact factor: 4.703

9.  Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures.

Authors:  Tianxiang Nan; Ming Liu; Wei Ren; Zuo-Guang Ye; Nian X Sun
Journal:  Sci Rep       Date:  2014-08-04       Impact factor: 4.379

10.  Dynamic in situ observation of voltage-driven repeatable magnetization reversal at room temperature.

Authors:  Ya Gao; Jia-Mian Hu; C T Nelson; T N Yang; Y Shen; L Q Chen; R Ramesh; C W Nan
Journal:  Sci Rep       Date:  2016-03-31       Impact factor: 4.379
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