| Literature DB >> 17558428 |
A M Yakunin1, A Yu Silov, P M Koenraad, J-M Tang, M E Flatté, J-L Primus, W Van Roy, J De Boeck, A M Monakhov, K S Romanov, I E Panaiotti, N S Averkiev.
Abstract
Transition-metal dopants such as Mn determine the ferromagnetism in dilute magnetic semiconductors such as Ga(1-x)Mn(x)As. Recently, the acceptor states of Mn dopants in GaAs were found to be highly anisotropic owing to the symmetry of the host crystal. Here, we show how the shape of such a state can be modified by local strain. The Mn acceptors near InAs quantum dots are mapped at room temperature by scanning tunnelling microscopy. Dramatic distortions and a reduction in the symmetry of the wavefunction of the hole bound to the Mn acceptor are observed originating from strain induced by quantum dots. Calculations of the acceptor-state wavefunction in the presence of strain, within a tight-binding model and within an effective-mass model, agree with the experimentally observed shape. The magnetic easy axes of strained lightly doped Ga(1-x)Mn(x)As can be explained on the basis of the observed local density of states for the single Mn spin.Entities:
Year: 2007 PMID: 17558428 DOI: 10.1038/nmat1936
Source DB: PubMed Journal: Nat Mater ISSN: 1476-1122 Impact factor: 43.841