Vapor deposition method for sensitivity studies on engineered surface-enhanced Raman scattering-active substrates.

The design and optimization of a vapor-phase analyte deposition method for limit of detection (LOD) studies on engineered surface-enhanced Raman scattering (SERS)-active substrates is presented. The vapor deposition method was designed to overcome current challenges in quantitative analysis of lithographically produced SERS substrates that are relatively small (hundreds of square micrometers). A custom-built flow cell was used to deposit benzenethiol from the vapor phase onto SERS-active Ag thin films, as the control substrates, and nanoaperture arrays that were generated by electron-beam lithography. The surface coverage of benzenethiol as a function of time was monitored using the ring stretching mode 1070-cm(-1) band and the trend was fit to Langmuir adsorption kinetics. The method was deemed reliable based on agreement between the LOD determined on the control substrates and previously reported values for those substrates. Application of the new method to a 20 x 20 microm(2) nanoaperture array yielded a LOD of 4.2 +/- 0.3 amol.