Literature DB >> 17412765

A hydrophobic element secures S4 voltage sensor in position in resting Shaker K+ channels.

Ya-Chin Yang1, Chia-Jen Own, Chung-Chin Kuo.   

Abstract

The S4 transmembrane alpha-helix in voltage-gated channels contains several regularly spaced basic amino acid residues that could be protonated and moved across the membrane electric field in response to membrane potential changes. The translocation of the charge-carrying S4 transduces membrane voltage to gating conformational changes of the channel, but how it is positioned and moved with respect to membrane lipid remains controversial. We found that hydrophilic and especially arginine and lysine substitution for L361 at the external end of S4 causes a large negative shift with shallowed slope of both activation and inactivation curves in Shaker K+ channels. Also, the macroscopic kinetics of activation and inactivation become much faster and barely voltage dependent, especially in the L361R mutant channel. These steady-state and kinetic data suggest that the replacement of one single hydrophobic residue, leucine, with arginine may profoundly destabilize the resting conformation of S4, which therefore takes a partially extruded position (partly activated position) at resting potentials (e.g. -120 mV). Consistently, the L361R point mutation gives rise to an extracellularly exposed R365C that is readily modified by external hydrophilic sulfhydryl-specific agents in the resting channel. Moreover, the extruded S4 in the L361R mutant channel could be retracted by strong hyperpolarizing potentials ( approximately -180 mV), from which the mutant channel is gated with slower kinetics but evidently stronger voltage dependence. We conclude that hydrophobic interaction involving a highly conserved residue at the top of S4 is crucial for properly securing the gating voltage sensor in the resting position and thus appropriate gating control of the voltage-gated channels.

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Year:  2007        PMID: 17412765      PMCID: PMC2075241          DOI: 10.1113/jphysiol.2007.131490

Source DB:  PubMed          Journal:  J Physiol        ISSN: 0022-3751            Impact factor:   5.182


  43 in total

Review 1.  The voltage sensor in voltage-dependent ion channels.

Authors:  F Bezanilla
Journal:  Physiol Rev       Date:  2000-04       Impact factor: 37.312

Review 2.  A new twist in the saga of charge movement in voltage-dependent ion channels.

Authors:  R Horn
Journal:  Neuron       Date:  2000-03       Impact factor: 17.173

3.  Reconstructing voltage sensor-pore interaction from a fluorescence scan of a voltage-gated K+ channel.

Authors:  C S Gandhi; E Loots; E Y Isacoff
Journal:  Neuron       Date:  2000-09       Impact factor: 17.173

4.  Periodic perturbations in Shaker K+ channel gating kinetics by deletions in the S3-S4 linker.

Authors:  C Gonzalez; E Rosenman; F Bezanilla; O Alvarez; R Latorre
Journal:  Proc Natl Acad Sci U S A       Date:  2001-08-07       Impact factor: 11.205

5.  Conformational switch between slow and fast gating modes: allosteric regulation of voltage sensor mobility in the EAG K+ channel.

Authors:  Roland Schönherr; Lidia M Mannuzzu; Ehud Y Isacoff; Stefan H Heinemann
Journal:  Neuron       Date:  2002-08-29       Impact factor: 17.173

6.  alpha-helical structural elements within the voltage-sensing domains of a K(+) channel.

Authors:  Y Li-Smerin; D H Hackos; K J Swartz
Journal:  J Gen Physiol       Date:  2000-01       Impact factor: 4.086

7.  Electrostatics and the gating pore of Shaker potassium channels.

Authors:  L D Islas; F J Sigworth
Journal:  J Gen Physiol       Date:  2001-01       Impact factor: 4.086

8.  Histidine scanning mutagenesis of basic residues of the S4 segment of the shaker k+ channel.

Authors:  D M Starace; F Bezanilla
Journal:  J Gen Physiol       Date:  2001-05       Impact factor: 4.086

9.  Voltage-dependent structural interactions in the Shaker K(+) channel.

Authors:  S K Tiwari-Woodruff; M A Lin; C T Schulteis; D M Papazian
Journal:  J Gen Physiol       Date:  2000-02       Impact factor: 4.086

Review 10.  Molecular models of voltage sensing.

Authors:  Chris S Gandhi; Ehud Y Isacoff
Journal:  J Gen Physiol       Date:  2002-10       Impact factor: 4.086

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  6 in total

1.  Coupling between residues on S4 and S1 defines the voltage-sensor resting conformation in NaChBac.

Authors:  Tzur Paldi; Michael Gurevitz
Journal:  Biophys J       Date:  2010-07-21       Impact factor: 4.033

2.  Functional extension of amino acid triads from the fourth transmembrane segment (S4) into its external linker in Shaker K(+) channels.

Authors:  Ya-Chin Yang; Shin Lin; Po-Chun Chang; Hsiao-Chun Lin; Chung-Chin Kuo
Journal:  J Biol Chem       Date:  2011-09-07       Impact factor: 5.157

3.  Exploring K v 1.2 Channel Inactivation Through MD Simulations and Network Analysis.

Authors:  Flavio Costa; Carlo Guardiani; Alberto Giacomello
Journal:  Front Mol Biosci       Date:  2021-12-20

4.  Voltage- and cold-dependent gating of single TRPM8 ion channels.

Authors:  José A Fernández; Roman Skryma; Gabriel Bidaux; Karl L Magleby; C Norman Scholfield; J Graham McGeown; Natalia Prevarskaya; Alexander V Zholos
Journal:  J Gen Physiol       Date:  2011-02       Impact factor: 4.086

5.  Nonsensing residues in S3-S4 linker's C terminus affect the voltage sensor set point in K+ channels.

Authors:  Joao L Carvalho-de-Souza; Francisco Bezanilla
Journal:  J Gen Physiol       Date:  2018-01-10       Impact factor: 4.086

6.  A single charged voltage sensor is capable of gating the Shaker K+ channel.

Authors:  Dominique G Gagnon; Francisco Bezanilla
Journal:  J Gen Physiol       Date:  2009-05       Impact factor: 4.086

  6 in total

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